Datasheets
CSD18502Q5B by: Texas Instruments

40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm 8-VSON-CLIP

Part Details for CSD18502Q5B by Texas Instruments

Overview of CSD18502Q5B by Texas Instruments

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Price & Stock for CSD18502Q5B

Part # Distributor Description Stock Price Buy
DISTI # 296-35629-1-ND
DigiKey MOSFET N-CH 40V 26A/100A 8VSON Min Qty: 1 Lead time: 6 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 3414
In Stock
  • 1 $2.5200
  • 10 $2.0910
  • 100 $1.6646
  • 500 $1.4085
  • 1,000 $1.1951
  • 2,500 $1.1354
  • 5,000 $1.0927
$1.0927 / $2.5200 Buy Now
DISTI # 595-CSD18502Q5B
Mouser Electronics MOSFET 40-V N-Ch NexFET Pwr MOSFET RoHS: Compliant 7433
  • 1 $2.5200
  • 10 $2.1000
  • 100 $1.6700
  • 500 $1.4100
  • 1,000 $1.2000
  • 2,500 $1.1300
  • 5,000 $1.0900
$1.0900 / $2.5200 Buy Now
Ameya Holding Limited MOSFET 40-V N-Ch NexFET Pwr MOSFET 24250
RFQ

Part Details for CSD18502Q5B

CSD18502Q5B CAD Models

CSD18502Q5B Part Data Attributes

CSD18502Q5B Texas Instruments
Buy Now Datasheet
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CSD18502Q5B Texas Instruments 40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm 8-VSON-CLIP
Pbfree Code Yes
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer TEXAS INSTRUMENTS INC
Package Description VSON-8
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer Texas Instruments
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 387 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 204 A
Drain-source On Resistance-Max 0.0033 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 27 pF
JESD-30 Code R-PDSO-N5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 156 W
Pulsed Drain Current-Max (IDM) 400 A
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for CSD18502Q5B

This table gives cross-reference parts and alternative options found for CSD18502Q5B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD18502Q5B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
CSD18502Q5BT 40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm 8-VSON-CLIP -55 to 150 Texas Instruments CSD18502Q5B vs CSD18502Q5BT
Part Number Description Manufacturer Compare
BSC022N04LS Power Field-Effect Transistor, 25A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG CSD18502Q5B vs BSC022N04LS
BSC022N04LSATMA1 Power Field-Effect Transistor, 25A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG CSD18502Q5B vs BSC022N04LSATMA1
CSD18511Q5A 40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm 8-VSONP -55 to 150 Texas Instruments CSD18502Q5B vs CSD18511Q5A
CSD18502Q5BT 40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm 8-VSON-CLIP -55 to 150 Texas Instruments CSD18502Q5B vs CSD18502Q5BT

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