Part Details for CSD18502Q5BT by Texas Instruments
Overview of CSD18502Q5BT by Texas Instruments
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for CSD18502Q5BT
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
296-49603-1-ND
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DigiKey | MOSFET N-CH 40V 100A 8VSON Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1300 In Stock |
|
$1.2537 / $2.6800 | Buy Now |
|
DISTI #
595-CSD18502Q5BT
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Mouser Electronics | MOSFET 40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm 8-VSON-CLIP -55 to 150 RoHS: Compliant | 6 |
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$1.2400 / $2.6800 | Buy Now |
|
DISTI #
CSD18502Q5BT
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TME | Transistor: N-MOSFET, unipolar, 40V, 100A, 156W, VSON-CLIP8, 5x6mm Min Qty: 1 | 0 |
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$1.6500 / $2.7700 | RFQ |
|
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Ameya Holding Limited | MOSFET N-CH 40V 100A 8VSON | 16813 |
|
RFQ |
Part Details for CSD18502Q5BT
CSD18502Q5BT CAD Models
CSD18502Q5BT Part Data Attributes
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CSD18502Q5BT
Texas Instruments
Buy Now
Datasheet
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Compare Parts:
CSD18502Q5BT
Texas Instruments
40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm 8-VSON-CLIP -55 to 150
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| Pbfree Code | Yes | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
| Package Description | SMALL OUTLINE, R-PDSO-N5 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 387 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 204 A | |
| Drain-source On Resistance-Max | 0.0033 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 27 pF | |
| JESD-30 Code | R-PDSO-N5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for CSD18502Q5BT
This table gives cross-reference parts and alternative options found for CSD18502Q5BT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD18502Q5BT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSC022N04LS | Power Field-Effect Transistor, 25A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | CSD18502Q5BT vs BSC022N04LS |
| BSC022N04LSATMA1 | Power Field-Effect Transistor, 25A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | CSD18502Q5BT vs BSC022N04LSATMA1 |
| CSD18511Q5A | 40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm 8-VSONP -55 to 150 | Texas Instruments | CSD18502Q5BT vs CSD18511Q5A |