Datasheets
CSD18537NKCS by: Texas Instruments

60-V, N channel NexFET™ power MOSFET, single TO-220, 14 mOhm 3-TO-220 -55 to 175

Part Details for CSD18537NKCS by Texas Instruments

Results Overview of CSD18537NKCS by Texas Instruments

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CSD18537NKCS Information

CSD18537NKCS by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for CSD18537NKCS

Part # Distributor Description Stock Price Buy
DISTI # CSD18537NKCS
TME Transistor: N-MOSFET, unipolar, 60V, 50A, 94W, TO220-3, 1.14÷1.4mm Min Qty: 1 232
  • 1 $1.2900
  • 5 $1.0500
  • 25 $0.9200
  • 100 $0.8000
$0.8000 / $1.2900 Buy Now

Part Details for CSD18537NKCS

CSD18537NKCS CAD Models

CSD18537NKCS Part Data Attributes

CSD18537NKCS Texas Instruments
Buy Now Datasheet
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CSD18537NKCS Texas Instruments 60-V, N channel NexFET™ power MOSFET, single TO-220, 14 mOhm 3-TO-220 -55 to 175
Pbfree Code Yes
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer TEXAS INSTRUMENTS INC
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer Texas Instruments
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 55 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 56 A
Drain-source On Resistance-Max 0.018 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5.2 pF
JEDEC-95 Code TO-220
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 79 W
Pulsed Drain Current-Max (IDM) 147 A
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Resources and Additional Insights for CSD18537NKCS

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CSD18537NKCS Related Parts

CSD18537NKCS Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the CSD18537NKCS is -40°C to 150°C.

  • To ensure the N-channel MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 4.5V and a drain-source voltage (Vds) of at least 1V.

  • The recommended gate resistor value for the CSD18537NKCS is between 10Ω and 100Ω, depending on the specific application and switching frequency.

  • Yes, the CSD18537NKCS is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize ringing and EMI.

  • To protect the CSD18537NKCS from ESD, use proper handling and storage procedures, and consider adding ESD protection devices, such as TVS diodes, in the circuit design.

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