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60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.8 mOhm 8-VSONP -55 to 150
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
296-37748-1-ND
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DigiKey | MOSFET N-CH 60V 100A 8VSON Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
19265 In Stock |
|
$0.6475 / $1.5400 | Buy Now |
DISTI #
595-CSD18563Q5AT
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Mouser Electronics | MOSFET 60V NCh NexFET Power MOSFET RoHS: Compliant | 3623 |
|
$0.6470 / $1.5400 | Buy Now |
DISTI #
CSD18563Q5AT
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TME | Transistor: N-MOSFET, unipolar, 60V, 100A, 116W, VSONP8, 5x6mm Min Qty: 1 | 556 |
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$0.9800 / $1.5000 | Buy Now |
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Ameya Holding Limited | Transistor: N-MOSFET, unipolar, 60V, 100A, 116W, VSONP8, 5x6mm | 83586 |
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RFQ | |
DISTI #
3125053
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element14 Asia-Pacific | RoHS: Compliant Min Qty: 1 Container: Cut Tape | 0 |
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$1.4971 / $1.9301 | Buy Now |
DISTI #
3125053RL
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Farnell | RoHS: Compliant Min Qty: 10 Container: Reel | 0 |
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$1.1377 / $1.7109 | Buy Now |
DISTI #
3125053
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Farnell | RoHS: Compliant Min Qty: 1 Container: Cut Tape | 0 |
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$1.1377 / $2.0106 | Buy Now |
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Win Source Electronics | 365333 |
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$0.6790 / $1.0180 | Buy Now |
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CSD18563Q5AT
Texas Instruments
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Datasheet
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Compare Parts:
CSD18563Q5AT
Texas Instruments
60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.8 mOhm 8-VSONP -55 to 150
|
Pbfree Code | Yes | |
Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Package Description | SMALL OUTLINE, R-PDSO-F5 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Texas Instruments | |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 146 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 93 A | |
Drain-source On Resistance-Max | 0.0108 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 5.1 pF | |
JESD-30 Code | R-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 116 W | |
Pulsed Drain Current-Max (IDM) | 251 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for CSD18563Q5AT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD18563Q5AT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BSC097N06NS | Power Field-Effect Transistor, 12A I(D), 60V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | CSD18563Q5AT vs BSC097N06NS |