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80-V, N channel NexFET™ power MOSFET, single D2PAK, 3.1 mOhm 2-DDPAK/TO-263 -55 to 175
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
26AJ5579
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Newark | Mosfet, N-Ch, 80V, To-263-3, Transistor Polarity:N Channel, Continuous Drain Current Id:212A, Drain Source Voltage Vds:80V, On Resistance Rds(On):0.0026Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.6V, Power Dissipation Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD19505KTT RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
|
$3.4400 / $4.1300 | Buy Now |
DISTI #
296-44040-1-ND
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DigiKey | MOSFET N-CH 80V 200A DDPAK Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
957 In Stock |
|
$1.4007 / $4.0800 | Buy Now |
DISTI #
595-CSD19505KTT
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Mouser Electronics | MOSFETs 80V, N-Channel NexFET Power Mosfet RoHS: Compliant | 790 |
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$1.4000 / $3.0000 | Buy Now |
DISTI #
CSD19505KTT
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TME | Transistor: N-MOSFET, unipolar, 80V, 200A, Idm: 400A, 300W, D2PAK Min Qty: 1 | 0 |
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$2.3400 / $3.5000 | RFQ |
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LCSC | 80V 200A 3.1m100A10V 300W 3.2V250uA 1 N-Channel TO-263-3 MOSFETs ROHS | 37 |
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$1.4211 / $2.0182 | Buy Now |
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Win Source Electronics | MOSFET N-CH 80V 200A DDPAK-3 / Trans MOSFET N-CH Si 80V 200A 4-Pin(3+Tab) TO-263 T/R | 1500 |
|
$83.4330 / $99.4780 | Buy Now |
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CSD19505KTT
Texas Instruments
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Datasheet
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CSD19505KTT
Texas Instruments
80-V, N channel NexFET™ power MOSFET, single D2PAK, 3.1 mOhm 2-DDPAK/TO-263 -55 to 175
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Pbfree Code | Yes | |
Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Package Description | SMALL OUTLINE, R-PSSO-G3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Date Of Intro | 2016-03-16 | |
Samacsys Manufacturer | Texas Instruments | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 510 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 200 A | |
Drain-source On Resistance-Max | 0.0038 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 34 pF | |
JESD-30 Code | R-PSSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for CSD19505KTT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD19505KTT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
CSD19506KTT | 80-V, N channel NexFET™ power MOSFET, single D2PAK, 2.3 mOhm 2-DDPAK/TO-263 -55 to 175 | Texas Instruments | CSD19505KTT vs CSD19506KTT |
CSD19506KTTT | 80-V, N channel NexFET™ power MOSFET, single D2PAK, 2.3 mOhm 2-DDPAK/TO-263 -55 to 175 | Texas Instruments | CSD19505KTT vs CSD19506KTTT |
IRFSL3107TRLPBF | Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | CSD19505KTT vs IRFSL3107TRLPBF |
IRFSL3107PBF | Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | CSD19505KTT vs IRFSL3107PBF |
IRFSL3107TRRPBF | Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | CSD19505KTT vs IRFSL3107TRRPBF |
AUIRFSL3107 | Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN | International Rectifier | CSD19505KTT vs AUIRFSL3107 |
IRFSL3107 | Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | CSD19505KTT vs IRFSL3107 |
AUIRFSL3107 | Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | Infineon Technologies AG | CSD19505KTT vs AUIRFSL3107 |