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100-V, N channel NexFET™ power MOSFET, single TO-220, 10.5 mOhm 3-TO-220 -55 to 175
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
CSD19533KCS
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TME | Transistor: N-MOSFET, unipolar, 100V, 100A, 188W, TO220-3 Min Qty: 1 | 244 |
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$1.0300 / $1.8700 | Buy Now |
DISTI #
C1S746203290834
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Chip1Stop | Trans MOSFET N-CH Si 100V 100A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant pbFree: Yes Container: Tube | 950 |
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$0.6660 / $1.0200 | Buy Now |
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LCSC | 100V 100A 188W 10.5m55A10V 3.4V250uA 1 N-channel TO-220 MOSFETs ROHS | 25 |
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$1.4651 / $2.4046 | Buy Now |
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CSD19533KCS
Texas Instruments
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Datasheet
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CSD19533KCS
Texas Instruments
100-V, N channel NexFET™ power MOSFET, single TO-220, 10.5 mOhm 3-TO-220 -55 to 175
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Pbfree Code | Yes | |
Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Package Description | PACKAGE-3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Texas Instruments | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 106 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.0122 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 12.5 pF | |
JEDEC-95 Code | TO-220 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 188 W | |
Pulsed Drain Current-Max (IDM) | 207 A | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for CSD19533KCS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD19533KCS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
APT10M11B2VFRG | Microchip Technology Inc | Check for Price | Power Field-Effect Transistor, 100A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | CSD19533KCS vs APT10M11B2VFRG |
APT10M11B2VFR | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 100A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3 | CSD19533KCS vs APT10M11B2VFR |
APT10M11B2VFR | Microchip Technology Inc | Check for Price | Power Field-Effect Transistor, 100A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | CSD19533KCS vs APT10M11B2VFR |
SML10T75XX | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 100A, 100V, 0.011ohm, N-CHANNEL, Si, POWER, MOSFET, T247CLIP, CLIP MOUNTED TO-247, 3 PIN | CSD19533KCS vs SML10T75XX |