Datasheets
CSD19534Q5AT by: Texas Instruments

100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 15.1 mOhm 8-VSONP -55 to 150

Part Details for CSD19534Q5AT by Texas Instruments

Overview of CSD19534Q5AT by Texas Instruments

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Applications Energy and Power Systems Renewable Energy

Price & Stock for CSD19534Q5AT

Part # Distributor Description Stock Price Buy
DISTI # 296-37838-1-ND
DigiKey MOSFET N-CH 100V 50A 8VSON Min Qty: 1 Lead time: 6 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 8926
In Stock
  • 1 $1.5800
  • 10 $1.3110
  • 100 $1.0438
  • 250 $1.0171
  • 500 $0.8832
  • 1,250 $0.7494
  • 2,500 $0.7119
  • 6,250 $0.6852
  • 12,500 $0.6625
$0.6625 / $1.5800 Buy Now
DISTI # 595-CSD19534Q5AT
Mouser Electronics MOSFET 100V, NCh NexFET RoHS: Compliant 7782
  • 1 $1.5800
  • 10 $1.3100
  • 100 $1.0500
  • 250 $0.9870
  • 500 $0.8740
  • 1,000 $0.7490
  • 2,500 $0.7110
  • 5,000 $0.6850
  • 10,000 $0.6620
$0.6620 / $1.5800 Buy Now
Bristol Electronics   102
RFQ
Quest Components POWER FIELD-EFFECT TRANSISTOR, 10A I(D), 100V, 0.0176OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 81
  • 1 $22.5000
  • 14 $18.5000
  • 55 $17.5000
$17.5000 / $22.5000 Buy Now
DISTI # CSD19534Q5AT
TME Transistor: N-MOSFET, unipolar, 100V, 50A, 63W, VSONP8, 5x6mm Min Qty: 1 0
  • 1 $1.4800
  • 5 $1.3200
  • 25 $1.1800
  • 100 $1.0500
$1.0500 / $1.4800 RFQ
Ameya Holding Limited Transistor: N-MOSFET, unipolar, 100V, 50A, 63W, VSONP8, 5x6mm 56015
RFQ
Win Source Electronics MOSFET N-CH 100V 50A 8VSON 277081
  • 110 $0.4750
  • 260 $0.3900
  • 400 $0.3780
  • 550 $0.3660
  • 710 $0.3530
  • 950 $0.3170
$0.3170 / $0.4750 Buy Now

Part Details for CSD19534Q5AT

CSD19534Q5AT CAD Models

CSD19534Q5AT Part Data Attributes

CSD19534Q5AT Texas Instruments
Buy Now Datasheet
Compare Parts:
CSD19534Q5AT Texas Instruments 100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 15.1 mOhm 8-VSONP -55 to 150
Pbfree Code Yes
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer TEXAS INSTRUMENTS INC
Package Description SMALL OUTLINE, R-PDSO-F5
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer Texas Instruments
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 55 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 44 A
Drain-source On Resistance-Max 0.0176 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 7.4 pF
JESD-30 Code R-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 137 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for CSD19534Q5AT

This table gives cross-reference parts and alternative options found for CSD19534Q5AT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD19534Q5AT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
CSD19534Q5A 100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 15.1 mOhm 8-VSONP -55 to 150 Texas Instruments CSD19534Q5AT vs CSD19534Q5A
Part Number Description Manufacturer Compare
BSC159N10LSFG Power Field-Effect Transistor, 9.4A I(D), 100V, 0.0159ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG CSD19534Q5AT vs BSC159N10LSFG
CSD19534Q5A 100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 15.1 mOhm 8-VSONP -55 to 150 Texas Instruments CSD19534Q5AT vs CSD19534Q5A
EPC2016 Power Field-Effect Transistor, 11A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-6 Efficient Power Conversion CSD19534Q5AT vs EPC2016

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