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100-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 14.5 mOhm 8-VSON-CLIP -55 to 150
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
296-42632-1-ND
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DigiKey | MOSFET N-CH 100V 50A 8VSON Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
2299 In Stock |
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$0.5786 / $1.5400 | Buy Now |
DISTI #
595-CSD19537Q3T
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Mouser Electronics | MOSFET 100-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 14.5 mOhm 8-VSON-CLIP -55 to 150 RoHS: Compliant | 30691 |
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$0.5860 / $1.5400 | Buy Now |
DISTI #
CSD19537Q3T
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TME | Transistor: N-MOSFET, unipolar, 100V, 50A, 83W, VSON-CLIP8 Min Qty: 1 | 92 |
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$0.7700 / $1.3400 | Buy Now |
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Ameya Holding Limited | Transistor: N-MOSFET, unipolar, 100V, 50A, 83W, VSON-CLIP8 | 10378 |
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RFQ | |
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Chip 1 Exchange | INSTOCK | 1500 |
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RFQ | |
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Win Source Electronics | 100V N-Channel NexFET Power MOSFET | 353400 |
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$0.4710 / $0.7070 | Buy Now |
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CSD19537Q3T
Texas Instruments
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Datasheet
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CSD19537Q3T
Texas Instruments
100-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 14.5 mOhm 8-VSON-CLIP -55 to 150
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Pbfree Code | Yes | |
Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Package Description | SMALL OUTLINE, S-PDSO-N5 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Texas Instruments | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 55 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 53 A | |
Drain-source On Resistance-Max | 0.0166 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 17.3 pF | |
JESD-30 Code | S-PDSO-N8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 219 A | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |