Datasheets
CSD19537Q3T by: Texas Instruments

100-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 14.5 mOhm 8-VSON-CLIP -55 to 150

Part Details for CSD19537Q3T by Texas Instruments

Overview of CSD19537Q3T by Texas Instruments

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Price & Stock for CSD19537Q3T

Part # Distributor Description Stock Price Buy
DISTI # 296-42632-1-ND
DigiKey MOSFET N-CH 100V 50A 8VSON Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 2299
In Stock
  • 1 $1.5400
  • 10 $1.2600
  • 100 $0.9799
  • 250 $0.9706
  • 500 $0.8306
  • 1,250 $0.6766
  • 2,500 $0.6369
  • 6,250 $0.6066
  • 12,500 $0.5786
$0.5786 / $1.5400 Buy Now
DISTI # 595-CSD19537Q3T
Mouser Electronics MOSFET 100-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 14.5 mOhm 8-VSON-CLIP -55 to 150 RoHS: Compliant 30691
  • 1 $1.5400
  • 10 $1.2600
  • 100 $0.9700
  • 250 $0.9700
  • 500 $0.8300
  • 1,000 $0.6760
  • 2,500 $0.6360
  • 5,000 $0.6130
  • 10,000 $0.5860
$0.5860 / $1.5400 Buy Now
DISTI # CSD19537Q3T
TME Transistor: N-MOSFET, unipolar, 100V, 50A, 83W, VSON-CLIP8 Min Qty: 1 92
  • 1 $1.3400
  • 5 $1.1500
  • 25 $0.9800
  • 100 $0.8500
  • 250 $0.7700
$0.7700 / $1.3400 Buy Now
Ameya Holding Limited Transistor: N-MOSFET, unipolar, 100V, 50A, 83W, VSON-CLIP8 10378
RFQ
Chip 1 Exchange INSTOCK 1500
RFQ
Win Source Electronics 100V N-Channel NexFET Power MOSFET 353400
  • 75 $0.7070
  • 175 $0.5800
  • 270 $0.5620
  • 370 $0.5440
  • 480 $0.5260
  • 640 $0.4710
$0.4710 / $0.7070 Buy Now

Part Details for CSD19537Q3T

CSD19537Q3T CAD Models

CSD19537Q3T Part Data Attributes

CSD19537Q3T Texas Instruments
Buy Now Datasheet
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CSD19537Q3T Texas Instruments 100-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 14.5 mOhm 8-VSON-CLIP -55 to 150
Pbfree Code Yes
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer TEXAS INSTRUMENTS INC
Package Description SMALL OUTLINE, S-PDSO-N5
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer Texas Instruments
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 55 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 53 A
Drain-source On Resistance-Max 0.0166 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 17.3 pF
JESD-30 Code S-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 219 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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