Datasheets
CSD19538Q2T by: Texas Instruments

100-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 59 mOhm 6-WSON -55 to 150

Part Details for CSD19538Q2T by Texas Instruments

Overview of CSD19538Q2T by Texas Instruments

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for CSD19538Q2T

Part # Distributor Description Stock Price Buy
DISTI # 95AC0751
Newark Mosfet Nch 100V 13.1A 6Wson Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD19538Q2T Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # 52AH3718
Newark Mosfet, N-Ch, 100V, 13.1A, Wson-6, Transistor Polarity:N Channel, Continuous Drain Current Id:13.1A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.049Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3.2V, Power Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD19538Q2T Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 0
  • 1 $1.4700
  • 10 $1.4000
  • 25 $1.3300
  • 50 $1.2700
  • 100 $1.2200
$1.2200 / $1.4700 Buy Now
DISTI # 296-44612-1-ND
DigiKey MOSFET N-CH 100V 13.1A 6WSON Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 3703
In Stock
  • 1 $1.2600
  • 10 $1.0310
  • 100 $0.8017
  • 250 $0.7941
  • 500 $0.6796
  • 1,250 $0.5536
  • 2,500 $0.5211
  • 6,250 $0.4963
  • 12,500 $0.4734
$0.4734 / $1.2600 Buy Now
DISTI # 595-CSD19538Q2T
Mouser Electronics MOSFET 100V, 49mOhm NexFET Power MOSFET RoHS: Compliant 42019
  • 1 $1.2100
  • 10 $1.0300
  • 100 $0.7870
  • 250 $0.7870
  • 500 $0.6790
  • 1,000 $0.5490
  • 2,500 $0.5120
  • 5,000 $0.4860
  • 10,000 $0.4730
$0.4730 / $1.2100 Buy Now
DISTI # CSD19538Q2T
TME Transistor: N-MOSFET, unipolar, 100V, 14.4A, 20.2W, WSON6, 2x2mm Min Qty: 1 2495
  • 1 $1.3200
  • 5 $1.1000
  • 25 $0.9800
  • 100 $0.8100
  • 250 $0.6900
$0.6900 / $1.3200 Buy Now
Ameya Holding Limited Transistor: N-MOSFET, unipolar, 100V, 14.4A, 20.2W, WSON6, 2x2mm 133508
RFQ
DISTI # 3125065
element14 Asia-Pacific   RoHS: Compliant Min Qty: 1 Container: Cut Tape 0
  • 1 $1.5154
  • 10 $1.3609
  • 100 $1.1990
$1.1990 / $1.5154 Buy Now
DISTI # 3125065RL
Farnell   RoHS: Compliant Min Qty: 100 Container: Reel 0
  • 100 $0.9989
  • 500 $0.9788
  • 1,000 $0.9587
$0.9587 / $0.9989 Buy Now
DISTI # 3125065
Farnell   RoHS: Compliant Min Qty: 1 Container: Cut Tape 0
  • 1 $1.4323
  • 10 $1.2816
  • 100 $0.9989
  • 500 $0.9788
  • 1,000 $0.9587
$0.9587 / $1.4323 Buy Now
Win Source Electronics MOSFET N-CH 100V 13.1A 6WSON / N-Channel 100 V 13.1A (Tc) 2.5W (Ta), 20.2W (Tc) Surface Mount 6-WSON (2x2) 75100
  • 150 $0.3400
  • 360 $0.2790
  • 560 $0.2700
  • 770 $0.2610
  • 990 $0.2530
  • 1,325 $0.2270
$0.2270 / $0.3400 Buy Now

Part Details for CSD19538Q2T

CSD19538Q2T CAD Models

CSD19538Q2T Part Data Attributes

CSD19538Q2T Texas Instruments
Buy Now Datasheet
Compare Parts:
CSD19538Q2T Texas Instruments 100-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 59 mOhm 6-WSON -55 to 150
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TEXAS INSTRUMENTS INC
Package Description SMALL OUTLINE, S-PDSO-N6
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Date Of Intro 2016-07-09
Samacsys Manufacturer Texas Instruments
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 8 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 13.1 A
Drain-source On Resistance-Max 0.072 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 16.4 pF
JESD-30 Code S-PDSO-N6
JESD-609 Code e4
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 20.2 W
Pulsed Drain Current-Max (IDM) 34.4 A
Surface Mount YES
Terminal Finish NICKEL PALLADIUM GOLD
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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