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100-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 59 mOhm 6-WSON -55 to 150
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
95AC0751
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Newark | Mosfet Nch 100V 13.1A 6Wson Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD19538Q2T Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now | |
DISTI #
52AH3718
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Newark | Mosfet, N-Ch, 100V, 13.1A, Wson-6, Transistor Polarity:N Channel, Continuous Drain Current Id:13.1A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.049Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3.2V, Power Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD19538Q2T Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
|
$1.2200 / $1.4700 | Buy Now |
DISTI #
296-44612-1-ND
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DigiKey | MOSFET N-CH 100V 13.1A 6WSON Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
3703 In Stock |
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$0.4734 / $1.2600 | Buy Now |
DISTI #
595-CSD19538Q2T
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Mouser Electronics | MOSFET 100V, 49mOhm NexFET Power MOSFET RoHS: Compliant | 42019 |
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$0.4730 / $1.2100 | Buy Now |
DISTI #
CSD19538Q2T
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TME | Transistor: N-MOSFET, unipolar, 100V, 14.4A, 20.2W, WSON6, 2x2mm Min Qty: 1 | 2495 |
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$0.6900 / $1.3200 | Buy Now |
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Ameya Holding Limited | Transistor: N-MOSFET, unipolar, 100V, 14.4A, 20.2W, WSON6, 2x2mm | 133508 |
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RFQ | |
DISTI #
3125065
|
element14 Asia-Pacific | RoHS: Compliant Min Qty: 1 Container: Cut Tape | 0 |
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$1.1990 / $1.5154 | Buy Now |
DISTI #
3125065RL
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Farnell | RoHS: Compliant Min Qty: 100 Container: Reel | 0 |
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$0.9587 / $0.9989 | Buy Now |
DISTI #
3125065
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Farnell | RoHS: Compliant Min Qty: 1 Container: Cut Tape | 0 |
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$0.9587 / $1.4323 | Buy Now |
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Win Source Electronics | MOSFET N-CH 100V 13.1A 6WSON / N-Channel 100 V 13.1A (Tc) 2.5W (Ta), 20.2W (Tc) Surface Mount 6-WSON (2x2) | 75100 |
|
$0.2270 / $0.3400 | Buy Now |
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CSD19538Q2T
Texas Instruments
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Datasheet
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CSD19538Q2T
Texas Instruments
100-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 59 mOhm 6-WSON -55 to 150
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Package Description | SMALL OUTLINE, S-PDSO-N6 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Date Of Intro | 2016-07-09 | |
Samacsys Manufacturer | Texas Instruments | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 8 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 13.1 A | |
Drain-source On Resistance-Max | 0.072 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 16.4 pF | |
JESD-30 Code | S-PDSO-N6 | |
JESD-609 Code | e4 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 20.2 W | |
Pulsed Drain Current-Max (IDM) | 34.4 A | |
Surface Mount | YES | |
Terminal Finish | NICKEL PALLADIUM GOLD | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |