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Part Details for CSD83325L by Texas Instruments
Results Overview of CSD83325L by Texas Instruments
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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CSD83325L Information
CSD83325L by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for CSD83325L
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | CSD83325L 12V, N Channel NexFET MOSFET, dual LGA, 5.9mOhm RoHS: Compliant Status: Active Min Qty: 1 | 361750 |
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$0.1652 / $0.1944 | Buy Now |
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LCSC | 12V 2.3W 1.25V250uA 2 N-Channel PicoStar-6 MOSFETs ROHS | 9 |
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$0.1948 / $0.3565 | Buy Now |
Part Details for CSD83325L
CSD83325L CAD Models
CSD83325L Part Data Attributes
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CSD83325L
Texas Instruments
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Datasheet
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CSD83325L
Texas Instruments
12-V, N channel NexFET™ power MOSFET, dual LGA, 5.9 mOhm, gate ESD protection 6-PICOSTAR
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
| Package Description | LGA, 6 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Texas Instruments | |
| Configuration | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 12 V | |
| Drain Current-Max (ID) | 8 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 144 pF | |
| JESD-30 Code | R-PBGA-B6 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.3 W | |
| Pulsed Drain Current-Max (IDM) | 52 A | |
| Surface Mount | YES | |
| Terminal Finish | NICKEL GOLD | |
| Terminal Form | BUTT | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
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