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20-V, N channel NexFET™ power MOSFET, dual SON 2 mm x 2 mm, 27 mOhm, gate ESD protection 6-WSON
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
296-40010-1-ND
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DigiKey | MOSFET 2N-CH 20V 5A 6WSON Min Qty: 1 Lead time: 6 Weeks Container: Tape & Reel (TR), Digi-Reel®, Cut Tape (CT) |
17115 In Stock |
|
$0.1873 / $0.6500 | Buy Now |
DISTI #
595-CSD85301Q2
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Mouser Electronics | MOSFET CSD85301Q2 Dual N- Channel Power MOSFET RoHS: Compliant | 9339 |
|
$0.1570 / $0.5400 | Buy Now |
DISTI #
V72:2272_07248901
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Arrow Electronics | Power MOSFET 6-Pin WSON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 6 Weeks Date Code: 2041 Container: Cut Strips | Americas - 483 |
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$0.1618 / $0.2875 | Buy Now |
DISTI #
62388843
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Verical | Power MOSFET 6-Pin WSON EP T/R Min Qty: 32 Package Multiple: 1 Date Code: 2041 | Americas - 483 |
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$0.1618 / $0.2694 | Buy Now |
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Bristol Electronics | 5 |
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RFQ | ||
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Quest Components | 4 |
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$0.7500 | Buy Now | |
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Ameya Holding Limited | MOSFET 2N-CH 20V 5A 6WSON | 103090 |
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RFQ | |
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Chip1Cloud | 20V Dual N-Channel NexFET Power MOSFETs | 51543 |
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RFQ | |
DISTI #
C1S746203837167
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Chip1Stop | MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape | 3000 |
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$0.1750 / $0.2800 | Buy Now |
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LCSC | 20V 5A 2.3W 27m4.5V5A 1.2V250uA 2 N-Channel WSON-6(2x2) MOSFETs ROHS | 225 |
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$0.1970 / $0.3522 | Buy Now |
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CSD85301Q2
Texas Instruments
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Datasheet
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Compare Parts:
CSD85301Q2
Texas Instruments
20-V, N channel NexFET™ power MOSFET, dual SON 2 mm x 2 mm, 27 mOhm, gate ESD protection 6-WSON
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Package Description | WSON-6 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Texas Instruments | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 3.8 mJ | |
Case Connection | DRAIN | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 5 A | |
Drain-source On Resistance-Max | 0.039 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 62 pF | |
JESD-30 Code | S-PDSO-N6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 26 A | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for CSD85301Q2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD85301Q2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
PJQ2800_R1_00001 | Power Field-Effect Transistor | PanJit Semiconductor | CSD85301Q2 vs PJQ2800_R1_00001 |