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Part Details for CSD87503Q3E by Texas Instruments
Overview of CSD87503Q3E by Texas Instruments
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for CSD87503Q3E
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
296-51022-1-ND
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DigiKey | MOSFET 2N-CH 30V 10A 8VSON Min Qty: 1 Lead time: 6 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
242 In Stock |
|
$0.5494 / $1.6000 | Buy Now |
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DISTI #
595-CSD87503Q3E
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Mouser Electronics | MOSFET 30-V Dual N-Channel MOSFET RoHS: Compliant | 3374 |
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$0.5490 / $1.5000 | Buy Now |
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Ameya Holding Limited | 47845 |
|
RFQ | ||
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Chip1Cloud | MOSFET 2 N-CHANNEL 30V 10A 8SON / 30-V N-Channel NexFET Power MOSFETs | 42000 |
|
RFQ |
Part Details for CSD87503Q3E
CSD87503Q3E CAD Models
CSD87503Q3E Part Data Attributes:
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CSD87503Q3E
Texas Instruments
Buy Now
Datasheet
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Compare Parts:
CSD87503Q3E
Texas Instruments
30-V, N channel NexFET™ power MOSFET, dual common source SON 3 mm x 3 mm, 21.9 mOhm 8-VSON -55 to 150
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
| Package Description | SMALL OUTLINE, S-PDSO-N6 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Date Of Intro | 2017-09-13 | |
| Samacsys Manufacturer | Texas Instruments | |
| Case Connection | DRAIN | |
| Configuration | COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.0219 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 194 pF | |
| JESD-30 Code | S-PDSO-N6 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 15.6 W | |
| Pulsed Drain Current-Max (IDM) | 89 A | |
| Surface Mount | YES | |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |