Part Details for DDB6U30N08VR by Infineon Technologies AG
Overview of DDB6U30N08VR by Infineon Technologies AG
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- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Part Details for DDB6U30N08VR
DDB6U30N08VR CAD Models
DDB6U30N08VR Part Data Attributes
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DDB6U30N08VR
Infineon Technologies AG
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Datasheet
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DDB6U30N08VR
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 26A I(C), 600V V(BR)CES, N-Channel, MODULE-9
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | MODULE | |
Package Description | MODULE-9 | |
Pin Count | 9 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 26 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X9 | |
Number of Elements | 1 | |
Number of Terminals | 9 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 83.5 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 145 ns | |
Turn-on Time-Nom (ton) | 38 ns | |
VCEsat-Max | 2.55 V |