Part Details for DF1000R17IE4D_B2 by Infineon Technologies AG
Overview of DF1000R17IE4D_B2 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Price & Stock for DF1000R17IE4D_B2
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
641-DF1000R17IE4D_B2
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Mouser Electronics | IGBT Modules 1700 V, 1000 A chopper IGBT module RoHS: Compliant | 2 |
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$549.0100 / $570.4900 | Buy Now |
Part Details for DF1000R17IE4D_B2
DF1000R17IE4D_B2 CAD Models
DF1000R17IE4D_B2 Part Data Attributes
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DF1000R17IE4D_B2
Infineon Technologies AG
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Datasheet
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DF1000R17IE4D_B2
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 1390A I(C), 1700V V(BR)CES, N-Channel, MODULE-12
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | MODULE | |
Package Description | FLANGE MOUNT, R-XUFM-X12 | |
Pin Count | 12 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 1390 A | |
Collector-Emitter Voltage-Max | 1700 V | |
Configuration | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | |
Gate-Emitter Thr Voltage-Max | 6.4 V | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X12 | |
Number of Elements | 1 | |
Number of Terminals | 12 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 6250 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 1910 ns | |
Turn-on Time-Nom (ton) | 830 ns | |
VCEsat-Max | 2.45 V |