Part Details for DF150R12RT4HOSA1 by Infineon Technologies AG
Overview of DF150R12RT4HOSA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
Price & Stock for DF150R12RT4HOSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | DFXR12I - IGBT Module RoHS: Compliant Status: Active Min Qty: 1 | 814 |
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$81.8100 / $96.2400 | Buy Now |
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DISTI #
DF150R12RT4HOSA1
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Avnet Americas | IGBT Module, Single Chopper, 150 A, 1.75 V, 790 W, 150 °C - Trays (Alt: DF150R12RT4HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Container: Tray | 0 |
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$92.3860 / $112.1830 | Buy Now |
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DISTI #
DF150R12RT4HOSA1
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Avnet Americas | IGBT Module, Single Chopper, 150 A, 1.75 V, 790 W, 150 °C - Trays (Alt: DF150R12RT4HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Container: Tray | 0 |
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$92.3860 / $112.1830 | Buy Now |
Part Details for DF150R12RT4HOSA1
DF150R12RT4HOSA1 CAD Models
DF150R12RT4HOSA1 Part Data Attributes
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DF150R12RT4HOSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
DF150R12RT4HOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-7
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | FLANGE MOUNT, R-XUFM-X4 | |
| Pin Count | 7 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| JESD-30 Code | R-XUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 490 ns | |
| Turn-on Time-Nom (ton) | 185 ns |
Alternate Parts for DF150R12RT4HOSA1
This table gives cross-reference parts and alternative options found for DF150R12RT4HOSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DF150R12RT4HOSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| DF150R12RT4 | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | DF150R12RT4HOSA1 vs DF150R12RT4 |