Datasheets
DIM200WLS12-A000 by: Dynex Semiconductor

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, W, 7 PIN

Part Details for DIM200WLS12-A000 by Dynex Semiconductor

Overview of DIM200WLS12-A000 by Dynex Semiconductor

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Price & Stock for DIM200WLS12-A000

Part # Distributor Description Stock Price Buy
DISTI # 8228051
Farnell IGBT MODULE, 1.2KV, 200A RoHS: Compliant Min Qty: 1 Lead time: 15 Weeks, 1 Days Container: Each 0
  • 1 $125.5765
  • 3 $118.2316
  • 10 $107.6334
  • 25 $100.4637
$100.4637 / $125.5765 Buy Now

Part Details for DIM200WLS12-A000

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DIM200WLS12-A000 Part Data Attributes:

DIM200WLS12-A000 Dynex Semiconductor
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DIM200WLS12-A000 Dynex Semiconductor Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, W, 7 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer DYNEX SEMICONDUCTOR LTD
Package Description FLANGE MOUNT, R-XUFM-X7
Pin Count 7
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 200 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
JESD-30 Code R-XUFM-X7
Number of Elements 1
Number of Terminals 7
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 870 ns
Turn-on Time-Nom (ton) 495 ns

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