Part Details for DMJ70H900HJ3 by Diodes Incorporated
Overview of DMJ70H900HJ3 by Diodes Incorporated
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Telecommunications
Price & Stock for DMJ70H900HJ3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
DMJ70H900HJ3-ND
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DigiKey | MOSFET N-CH 700V 7A TO251 Lead time: 12 Weeks Container: Tube | Temporarily Out of Stock |
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Buy Now | |
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DISTI #
DMJ70H900HJ3
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Avnet Americas | MOSFET BVDSS: 651V~800V TO251 TUBE 75PCS - Rail/Tube (Alt: DMJ70H900HJ3) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Container: Tube | 0 |
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RFQ | |
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DISTI #
DMJ70H900HJ3
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Avnet Silica | MOSFET BVDSS: 651V~800V TO251 TUBE 75PCS (Alt: DMJ70H900HJ3) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 14 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for DMJ70H900HJ3
DMJ70H900HJ3 CAD Models
DMJ70H900HJ3 Part Data Attributes
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DMJ70H900HJ3
Diodes Incorporated
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Datasheet
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DMJ70H900HJ3
Diodes Incorporated
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | DIODES INC | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Avalanche Energy Rating (Eas) | 50 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 700 V | |
| Drain Current-Max (ID) | 7 A | |
| Drain-source On Resistance-Max | 0.9 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-251 | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 68 W | |
| Pulsed Drain Current-Max (IDM) | 10 A | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |