Part Details for DMN3009LFVQ-13 by Diodes Incorporated
Overview of DMN3009LFVQ-13 by Diodes Incorporated
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Electronic Manufacturing
Renewable Energy
Medical Imaging
Robotics and Drones
Price & Stock for DMN3009LFVQ-13
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
36AJ8871
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Newark | Mosfet, N-Ch, 30V, 60A, Powerdi 3333 Rohs Compliant: Yes |Diodes Inc. DMN3009LFVQ-13 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 3000 |
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$0.5220 / $1.2000 | Buy Now |
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DISTI #
31-DMN3009LFVQ-13TR-ND
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DigiKey | MOSFET BVDSS: 25V~30V POWERDI333 Min Qty: 3000 Lead time: 28 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$0.2389 / $0.2775 | Buy Now |
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DISTI #
DMN3009LFVQ-13
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Avnet Americas | Transistor MOSFET N-Channel 30V 60A 8-Pin PowerDI3333 T/R - Tape and Reel (Alt: DMN3009LFVQ-13) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 28 Weeks, 0 Days Container: Reel | 3000 Factory Stock |
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$0.2692 | Buy Now |
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DISTI #
621-DMN3009LFVQ-13
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Mouser Electronics | MOSFETs MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 3K RoHS: Compliant | 0 |
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$0.3380 | Order Now |
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Future Electronics | RoHS: Not Compliant pbFree: No Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks | 0 |
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$0.2520 | Buy Now |
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DISTI #
DMN3009LFVQ-13
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Avnet Silica | Transistor MOSFET N-Channel 30V 60A 8-Pin PowerDI3333 T/R (Alt: DMN3009LFVQ-13) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 30 Weeks, 0 Days | Silica - 3000 |
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Buy Now | |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 3000 |
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$0.4289 | Buy Now |
Part Details for DMN3009LFVQ-13
DMN3009LFVQ-13 CAD Models
DMN3009LFVQ-13 Part Data Attributes
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DMN3009LFVQ-13
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMN3009LFVQ-13
Diodes Incorporated
Power Field-Effect Transistor, 60A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 28 Weeks | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Avalanche Energy Rating (Eas) | 58 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.0055 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 247 pF | |
| JESD-30 Code | S-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 90 A | |
| Reference Standard | AEC-Q101; IATF 16949; MIL-STD-202 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |