Datasheets
DMN3404L-7 by: Diodes Incorporated

Power Field-Effect Transistor, 5.8A I(D), 30V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3

Part Details for DMN3404L-7 by Diodes Incorporated

Results Overview of DMN3404L-7 by Diodes Incorporated

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DMN3404L-7 Information

DMN3404L-7 by Diodes Incorporated is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for DMN3404L-7

Part # Distributor Description Stock Price Buy
DISTI # 23T5605
Newark Mosfet, n Channel,30V,5.8A, sot-23, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:4.2A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.5V Rohs Compliant: Yes |Diodes Inc. DMN3404L-7 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 175
  • 1 $0.3090
  • 10 $0.2140
  • 25 $0.1830
  • 50 $0.1500
  • 100 $0.1190
  • 250 $0.1160
  • 500 $0.1120
  • 1,000 $0.1090
$0.1090 / $0.3090 Buy Now
DISTI # 81AC7967
Newark Mosfet Bvdss: 25V~30V Sot23 T&r 3K Rohs Compliant: Yes |Diodes Inc. DMN3404L-7 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.0360
$0.0360 Buy Now
DISTI # 86AK4777
Newark Mosfet, N-Ch, 30V, 4.2A, Sot-23 Rohs Compliant: Yes |Diodes Inc. DMN3404L-7 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 3,000 $0.0930
  • 6,000 $0.0890
  • 12,000 $0.0850
  • 18,000 $0.0810
  • 30,000 $0.0770
$0.0770 / $0.0930 Buy Now
DISTI # DMN3404L-7
Avnet Americas Trans MOSFET N-CH 30V 5.8A 3-Pin SOT-23 T/R - Tape and Reel (Alt: DMN3404L-7) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel 306000
2850000 Factory Stock
  • 3,000 $0.0351
  • 6,000 $0.0347
  • 12,000 $0.0343
  • 18,000 $0.0341
  • 24,000 $0.0339
$0.0339 / $0.0351 Buy Now
DISTI # 23T5605
Avnet Americas Trans MOSFET N-CH 30V 5.8A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 23T5605) RoHS: Compliant Min Qty: 5 Package Multiple: 5 Container: Ammo Pack 175 Partner Stock
  • 1 $0.2590
  • 10 $0.1800
  • 25 $0.1530
  • 50 $0.1250
  • 100 $0.0980
$0.0980 / $0.2590 Buy Now
Bristol Electronics   375997
RFQ
Bristol Electronics   Min Qty: 23 856
  • 23 $0.2250
  • 68 $0.1125
  • 446 $0.0675
$0.0675 / $0.2250 Buy Now
Bristol Electronics   299
RFQ
DISTI # DMN3404L-7
TME Transistor: N-MOSFET, unipolar, 30V, 3A, 0.72W, SOT23 Min Qty: 1 59
  • 1 $0.2226
  • 10 $0.1508
  • 50 $0.1019
  • 100 $0.0865
  • 500 $0.0621
  • 1,500 $0.0520
  • 3,000 $0.0474
  • 6,000 $0.0443
$0.0443 / $0.2226 Buy Now
DISTI # DMN3404L-7
Avnet Asia Trans MOSFET N-CH 30V 5.8A 3-Pin SOT-23 T/R (Alt: DMN3404L-7) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days 15000
  • 3,000 $0.0450
  • 6,000 $0.0420
  • 9,000 $0.0409
  • 15,000 $0.0399
  • 30,000 $0.0389
  • 75,000 $0.0379
  • 150,000 $0.0371
$0.0371 / $0.0450 Buy Now
DISTI # DMN3404L-7
Avnet Silica Trans MOSFET NCH 30V 58A 3Pin SOT23 TR (Alt: DMN3404L-7) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days Silica - 720000
Buy Now
Component Electronics, Inc IN STOCK SHIP TODAY 82
  • 1 $0.3800
  • 100 $0.2900
  • 1,000 $0.2500
$0.2500 / $0.3800 Buy Now
LCSC 30V 5.8A 28m10V5.8A 1.4W 2V SOT-23 MOSFETs ROHS 3770
  • 10 $0.0527
  • 100 $0.0416
  • 300 $0.0360
  • 3,000 $0.0319
  • 6,000 $0.0286
  • 9,000 $0.0269
$0.0269 / $0.0527 Buy Now
MacroQuest Electronics STOCK 60000
  • 1 $0.0500
  • 3,000 $0.0400
  • 9,000 $0.0300
$0.0300 / $0.0500 Buy Now
New Advantage Corporation N-Channel 30 V 28 mOhm Surface Mount Enhancement Mode Mosfet - SOT-23-3 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 462000
  • 3,000 $0.0501
  • 462,000 $0.0468
$0.0468 / $0.0501 Buy Now
Win Source Electronics MOSFET N-CH 30V 5.8A SOT-23 990000
  • 2,060 $0.0243
  • 4,390 $0.0228
  • 6,820 $0.0220
  • 9,805 $0.0204
  • 12,760 $0.0196
  • 15,875 $0.0189
$0.0189 / $0.0243 Buy Now

Part Details for DMN3404L-7

DMN3404L-7 CAD Models

DMN3404L-7 Part Data Attributes

DMN3404L-7 Diodes Incorporated
Buy Now Datasheet
Compare Parts:
DMN3404L-7 Diodes Incorporated Power Field-Effect Transistor, 5.8A I(D), 30V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer DIODES INC
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Diodes Incorporated
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

DMN3404L-7 Related Parts

DMN3404L-7 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the DMN3404L-7 is a standard SOT23 package with a 1.5mm x 1.5mm pad size, and a 0.5mm x 0.5mm thermal pad.

  • To ensure proper biasing, connect the gate to a voltage source through a 1kΩ to 10kΩ resistor, and the source to ground through a 100Ω to 1kΩ resistor. This will provide a stable voltage reference and minimize oscillations.

  • The maximum safe operating area (SOA) for the DMN3404L-7 is defined by the maximum drain-source voltage (Vds) of 30V, maximum drain current (Id) of 3.4A, and maximum power dissipation (Pd) of 1.1W. Operating within these limits ensures reliable device operation.

  • Yes, the DMN3404L-7 is suitable for high-frequency switching applications up to 100 kHz. However, ensure proper PCB layout, decoupling, and thermal management to minimize electromagnetic interference (EMI) and thermal issues.

  • To manage thermal issues, ensure good thermal conductivity between the device and the PCB, use a thermal pad or heat sink if necessary, and maintain a maximum junction temperature (Tj) of 150°C. Monitor the device's thermal resistance (RθJA) and adjust the design accordingly.

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