Part Details for DMNH6010SCTBQ-13 by Diodes Incorporated
Overview of DMNH6010SCTBQ-13 by Diodes Incorporated
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Price & Stock for DMNH6010SCTBQ-13
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31-DMNH6010SCTBQ-13TR-ND
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DigiKey | MOSFET BVDSS: 41V~60V TO263 T&R Min Qty: 800 Lead time: 8 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$1.2172 / $1.2813 | Buy Now |
DISTI #
DMNH6010SCTBQ-13
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Avnet Americas | MOSFET BVDSS: 41V~60V TO263 T&R 0.8K - Tape and Reel (Alt: DMNH6010SCTBQ-13) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 8 Weeks, 0 Days Container: Reel | 7200 Factory Stock |
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$1.1737 | Buy Now |
DISTI #
621-DMNH6010SCTBQ-13
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Mouser Electronics | MOSFETs MOSFET BVDSS: 41V-60V TO263 T&R 0.8K RoHS: Compliant | 0 |
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$1.2100 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 8 Weeks Container: Reel | 0Reel |
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$1.2000 / $1.2600 | Buy Now |
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Future Electronics | 60V, 113A, 10MOHMS, N-CH, D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 8 Weeks Container: Reel | 0Reel |
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$1.2000 / $1.2600 | Buy Now |
DISTI #
DMNH6010SCTBQ-13
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Avnet Silica | MOSFET BVDSS: 41V~60V TO263 T&R 0.8K (Alt: DMNH6010SCTBQ-13) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for DMNH6010SCTBQ-13
DMNH6010SCTBQ-13 CAD Models
DMNH6010SCTBQ-13 Part Data Attributes
|
DMNH6010SCTBQ-13
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMNH6010SCTBQ-13
Diodes Incorporated
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Avalanche Energy Rating (Eas) | 252 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 133 A | |
Drain-source On Resistance-Max | 0.01 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 65 pF | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 375 W | |
Pulsed Drain Current-Max (IDM) | 532 A | |
Reference Standard | AEC-Q101; IATF 16949; MIL-STD-202 | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |