Part Details for DMNH6065SSDQ-13 by Diodes Incorporated
Overview of DMNH6065SSDQ-13 by Diodes Incorporated
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for DMNH6065SSDQ-13
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31-DMNH6065SSDQ-13TR-ND
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DigiKey | MOSFET 2N-CH 60V 3.8A 8SO Min Qty: 2500 Lead time: 16 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$0.3937 / $0.4321 | Buy Now |
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DISTI #
DMNH6065SSDQ-13
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Avnet Americas | Transistor MOSFET Array Dual N-Channel 60V 3.8A 8-Pin SO T/R - Tape and Reel (Alt: DMNH6065SSDQ-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel | 2500 Factory Stock |
|
$0.3424 | Buy Now |
|
DISTI #
621-DMNH6065SSDQ-13
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Mouser Electronics | MOSFETs MOSFET BVDSS: 41V-60V SO-8 T&R 2.5K RoHS: Compliant | 0 |
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$0.3930 / $0.4210 | Order Now |
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Future Electronics | RoHS: Not Compliant pbFree: No Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks | 0 |
|
$0.4150 | Buy Now |
Part Details for DMNH6065SSDQ-13
DMNH6065SSDQ-13 CAD Models
DMNH6065SSDQ-13 Part Data Attributes
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DMNH6065SSDQ-13
Diodes Incorporated
Buy Now
Datasheet
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DMNH6065SSDQ-13
Diodes Incorporated
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Avalanche Energy Rating (Eas) | 84.5 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 3.8 A | |
| Drain-source On Resistance-Max | 0.088 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 10 pF | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Reference Standard | AEC-Q101; IATF 16949; MIL-STD-202 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |