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Part Details for DMP2006UFG-13 by Diodes Incorporated
Overview of DMP2006UFG-13 by Diodes Incorporated
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for DMP2006UFG-13
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
621-DMP2006UFG-13
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Mouser Electronics | MOSFETs 20V P-Ch Enh Mode 10Vgss 5404pF 64nC RoHS: Compliant | 0 |
|
$0.2650 / $0.2710 | Order Now |
|
DISTI #
DMP2006UFG-13
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TME | Transistor: P-MOSFET, unipolar, -20V, -14A, Idm: -80A, 2.3W Min Qty: 1 | 0 |
|
$0.2790 / $0.7980 | RFQ |
Part Details for DMP2006UFG-13
DMP2006UFG-13 CAD Models
DMP2006UFG-13 Part Data Attributes
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DMP2006UFG-13
Diodes Incorporated
Buy Now
Datasheet
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DMP2006UFG-13
Diodes Incorporated
Power Field-Effect Transistor
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | DIODES INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Avalanche Energy Rating (Eas) | 28 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 17.5 A | |
| Drain-source On Resistance-Max | 0.0055 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 900 pF | |
| JESD-30 Code | S-PDSO-N5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 41 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 370 ns | |
| Turn-on Time-Max (ton) | 55 ns |