Part Details for DMP26M1UFG-13 by Diodes Incorporated
Overview of DMP26M1UFG-13 by Diodes Incorporated
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for DMP26M1UFG-13
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31-DMP26M1UFG-13TR-ND
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DigiKey | MOSFET BVDSS: 8V~24V POWERDI3333 Min Qty: 3000 Lead time: 16 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$0.2765 / $0.3138 | Buy Now |
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DISTI #
DMP26M1UFG-13
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Avnet Americas | Transistor MOSFET P-Channel 20V 0.71A 8-Pin PowerDI3333 T/R - Tape and Reel (Alt: DMP26M1UFG-13) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.3026 | Buy Now |
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DISTI #
621-DMP26M1UFG-13
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Mouser Electronics | MOSFETs MOSFET BVDSS: 8V-24V PowerDI3333-8 T&R 3K RoHS: Compliant | 0 |
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$0.2760 / $0.3120 | Order Now |
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Future Electronics | RoHS: Not Compliant pbFree: No Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks | 0 |
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$0.2920 | Buy Now |
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DISTI #
DMP26M1UFG-13
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Avnet Silica | Transistor MOSFET P-Channel 20V 0.71A 8-Pin PowerDI3333 T/R (Alt: DMP26M1UFG-13) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for DMP26M1UFG-13
DMP26M1UFG-13 CAD Models
DMP26M1UFG-13 Part Data Attributes
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DMP26M1UFG-13
Diodes Incorporated
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Datasheet
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Compare Parts:
DMP26M1UFG-13
Diodes Incorporated
Power Field-Effect Transistor, 71A I(D), 20V, 0.0055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Avalanche Energy Rating (Eas) | 71 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 71 A | |
| Drain-source On Resistance-Max | 0.0055 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 564 pF | |
| JESD-30 Code | S-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 3 W | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |