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Power Field-Effect Transistor, 2.1A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
28AK8811
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Newark | Mosfet, P-Ch, 60V, 6.1A, Sot-223 Rohs Compliant: Yes |Diodes Inc. DMP6250SE-13 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2241 |
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$0.3650 / $0.7890 | Buy Now |
DISTI #
DMP6250SE-13DICT-ND
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DigiKey | MOSFET P-CH 60V 2.1A SOT223 Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
5887 In Stock |
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$0.2343 / $0.7100 | Buy Now |
DISTI #
DMP6250SE-13
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Avnet Americas | Trans MOSFET P-CH 60V 6.1A 3-Pin SOT-223 T/R - Tape and Reel (Alt: DMP6250SE-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days Container: Reel | 10000 Factory Stock |
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$0.1937 / $0.2288 | Buy Now |
DISTI #
621-DMP6250SE-13
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Mouser Electronics | MOSFET FET BVDSS 41V 60V P-Ch 6.1A 250Vgs RoHS: Compliant | 10106 |
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$0.2680 / $0.7100 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks Container: Reel | 0Reel |
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$0.2100 / $0.2250 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks Container: Reel | 0Reel |
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$0.2100 / $0.2250 | Buy Now |
DISTI #
DMP6250SE-13
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Avnet Silica | Trans MOSFET P-CH 60V 6.1A 3-Pin SOT-223 T/R (Alt: DMP6250SE-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days | Silica - 2500 |
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Buy Now | |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 2500 | 2500 |
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$0.3548 | Buy Now |
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DMP6250SE-13
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMP6250SE-13
Diodes Incorporated
Power Field-Effect Transistor, 2.1A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | Diodes Incorporated | |
Additional Feature | HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 8 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 2.1 A | |
Drain-source On Resistance-Max | 0.25 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 11 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |