Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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Distributor Offerings: (
6 listings
)
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Number of FFF Equivalents: (
0 replacements
)
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CAD Models: (
Available
)
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Number of Functional Equivalents: (
0 options
)
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Part Data Attributes (
Available
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Reference Designs: (
Not Available
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Where used in Applications:
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
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Part # |
Manufacturer |
Description |
Stock |
Price |
Buy |
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Newark
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Mosfet, P-Ch, 40V, 11.4A, Soic Rohs Compliant: Yes |Diodes Inc. DMPH4015SSS-13
RoHS:
Compliant
Min Qty:
1
Package Multiple:
1
Date Code:
0
Container:
Cut Tape
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2496
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1
$1.2400
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10
$1.0100
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25
$0.9360
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50
$0.8620
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100
$0.7870
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250
$0.7270
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500
$0.6670
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1,000
$0.6060
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$0.6060 / $1.2400
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Buy Now
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DISTI #
31-DMPH4015SSS-13CT-ND
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DigiKey
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MOSFET P-CHANNEL 40V 11.4A 8SO
Min Qty:
1
Lead time:
8 Weeks
Container:
Digi-Reel®, Cut Tape (CT), Tape & Reel (TR)
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9248 In Stock
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1
$1.1900
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10
$0.9720
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100
$0.7563
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500
$0.6411
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1,000
$0.5222
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2,500
$0.4594
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$0.4594 / $1.1900
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Buy Now
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Avnet Americas
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MOSFET BVDSS: 31V~40V SO-8 T&R 2.5K - Tape and Reel (Alt: DMPH4015SSS-13)
RoHS:
Compliant
Min Qty:
2500
Package Multiple:
2500
Lead time:
8 Weeks, 0 Days
Container:
Reel
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12500 Factory Stock
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$0.6125
|
Buy Now
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DISTI #
621-DMPH4015SSS-13
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Mouser Electronics
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MOSFETs MOSFET BVDSS: 31V-40V
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3500
|
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1
$1.1900
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10
$0.9720
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100
$0.7570
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500
$0.6410
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1,000
$0.5230
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2,500
$0.4590
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$0.4590 / $1.1900
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Buy Now
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Future Electronics
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RoHS:
Compliant
pbFree:
Yes
Min Qty:
2500
Package Multiple:
2500
Lead time:
8 Weeks
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0
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$0.4840
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Buy Now
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Avnet Silica
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MOSFET BVDSS: 31V~40V SO-8 T&R 2.5K (Alt: DMPH4015SSS-13)
RoHS:
Compliant
Min Qty:
2500
Package Multiple:
2500
Lead time:
10 Weeks, 0 Days
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Silica - 0
|
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Buy Now
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Part Symbol
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Footprint
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3D Model
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Avalanche Energy Rating (Eas)
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SINGLE WITH BUILT-IN DIODE
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Drain-source On Resistance-Max
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METAL-OXIDE SEMICONDUCTOR
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Moisture Sensitivity Level
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Operating Temperature-Max
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Operating Temperature-Min
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Peak Reflow Temperature (Cel)
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Power Dissipation-Max (Abs)
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Pulsed Drain Current-Max (IDM)
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Time@Peak Reflow Temperature-Max (s)
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Transistor Element Material
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Want to compare parts?
-
Diodes Incorporated
Power Field-Effect Transistor,
VS
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