Part Details for DMPH4025SFVWQ-7 by Diodes Incorporated
Overview of DMPH4025SFVWQ-7 by Diodes Incorporated
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Aerospace and Defense
Price & Stock for DMPH4025SFVWQ-7
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
DMPH4025SFVWQ-7-ND
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DigiKey | MOSFET P-CH 40V PWRDI3333 Min Qty: 2000 Lead time: 24 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$0.2954 / $0.3481 | Buy Now |
DISTI #
DMPH4025SFVWQ-7
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Avnet Americas | MOSFET BVDSS: 31V~40V PowerDI3333-8 T&R 2K - Tape and Reel (Alt: DMPH4025SFVWQ-7) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 24 Weeks, 0 Days Container: Reel | 8000 Factory Stock |
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$0.3594 | Buy Now |
DISTI #
621-DMPH4025SFVWQ-7
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Mouser Electronics | MOSFETs MOSFET BVDSS: 31V-40V RoHS: Compliant | 0 |
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$0.3380 / $0.8900 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 24 Weeks | 0 |
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$0.3110 | Buy Now |
DISTI #
DMPH4025SFVWQ-7
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Avnet Silica | (Alt: DMPH4025SFVWQ-7) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 26 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for DMPH4025SFVWQ-7
DMPH4025SFVWQ-7 CAD Models
DMPH4025SFVWQ-7 Part Data Attributes
|
DMPH4025SFVWQ-7
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMPH4025SFVWQ-7
Diodes Incorporated
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Package Description | SMALL OUTLINE, R-PDSO-F5 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 24 Weeks | |
Samacsys Manufacturer | Diodes Incorporated | |
Additional Feature | HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 82 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 40 A | |
Drain-source On Resistance-Max | 0.025 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 151 pF | |
JESD-30 Code | R-PDSO-F5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 60 W | |
Pulsed Drain Current-Max (IDM) | 80 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |