Part Details for DMPH4029LFG-7 by Diodes Incorporated
Overview of DMPH4029LFG-7 by Diodes Incorporated
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for DMPH4029LFG-7
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
DMPH4029LFG-7DI-ND
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DigiKey | MOSFET P-CH 40V 8A/22A PWRDI3333 Min Qty: 2000 Lead time: 24 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$0.2227 / $0.2539 | Buy Now |
DISTI #
DMPH4029LFG-7
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Avnet Americas | MOSFET P-Channel Enhancement 40V 22A 8-Pin PowerDI3333 T/R - Tape and Reel (Alt: DMPH4029LFG-7) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 24 Weeks, 0 Days Container: Reel | 42000 Factory Stock |
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$0.2187 / $0.2584 | Buy Now |
DISTI #
621-DMPH4029LFG-7
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Mouser Electronics | MOSFET MOSFET BVDSS: 31V-40V RoHS: Compliant | 0 |
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$0.2220 / $0.6700 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 24 Weeks | 0 |
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$0.2330 | Buy Now |
DISTI #
DMPH4029LFG-7
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Avnet Silica | (Alt: DMPH4029LFG-7) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 26 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for DMPH4029LFG-7
DMPH4029LFG-7 CAD Models
DMPH4029LFG-7 Part Data Attributes
|
DMPH4029LFG-7
Diodes Incorporated
Buy Now
Datasheet
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DMPH4029LFG-7
Diodes Incorporated
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 24 Weeks | |
Samacsys Manufacturer | Diodes Incorporated | |
Avalanche Energy Rating (Eas) | 32 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 8 A | |
Drain-source On Resistance-Max | 0.045 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 107 pF | |
JESD-30 Code | S-PDSO-N8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 2.8 W | |
Pulsed Drain Current-Max (IDM) | 88 A | |
Reference Standard | MIL-STD-202 | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |