Part Details for DMT10H009LH3 by Diodes Incorporated
Overview of DMT10H009LH3 by Diodes Incorporated
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for DMT10H009LH3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
DMT10H009LH3DI-ND
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DigiKey | MOSFET N-CH 100V 84A TO251 Min Qty: 75 Lead time: 24 Weeks Container: Tube | Temporarily Out of Stock |
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$0.8263 | Buy Now |
DISTI #
DMT10H009LH3
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Avnet Americas | Trans MOSFET N-CH 100V 84A 3-Pin TO-251 Tube - Rail/Tube (Alt: DMT10H009LH3) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 24 Weeks, 0 Days Container: Tube | 0 |
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$0.3828 / $0.4522 | Buy Now |
DISTI #
621-DMT10H009LH3
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Mouser Electronics | MOSFET MOSFET BVDSS 61V-100V RoHS: Compliant | 0 |
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$0.6390 / $1.0200 | Order Now |
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Future Electronics | MOSFET MOSFET BVDSS 61V-100V RoHS: Compliant pbFree: Yes Min Qty: 75 Package Multiple: 75 Lead time: 24 Weeks Container: Tube | 0Tube |
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$0.6150 / $0.7300 | Buy Now |
DISTI #
DMT10H009LH3
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TME | Transistor: N-MOSFET, unipolar, 100V, 67A, Idm: 336A, 61W, TO251 Min Qty: 1 | 0 |
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$0.5680 / $0.8520 | RFQ |
Part Details for DMT10H009LH3
DMT10H009LH3 CAD Models
DMT10H009LH3 Part Data Attributes
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DMT10H009LH3
Diodes Incorporated
Buy Now
Datasheet
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DMT10H009LH3
Diodes Incorporated
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 24 Weeks | |
Date Of Intro | 2019-01-28 | |
Samacsys Manufacturer | Diodes Incorporated | |
Avalanche Energy Rating (Eas) | 66 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 84 A | |
Drain-source On Resistance-Max | 0.009 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 13.7 pF | |
JEDEC-95 Code | TO-251 | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 96 W | |
Pulsed Drain Current-Max (IDM) | 336 A | |
Reference Standard | MIL-STD-202 | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |