There are no models available for this part yet.
Overview of DMT47M2SFVW-13 by Diodes Incorporated
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 5 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Industrial Automation
Energy and Power Systems
Renewable Energy
Robotics and Drones
Price & Stock for DMT47M2SFVW-13 by Diodes Incorporated
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
DMT47M2SFVW-13DI-ND
|
DigiKey | MOSFET N-CH 40V PWRDI3333 Min Qty: 3000 Lead time: 24 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
$0.2112 / $0.2504 | Buy Now | |
|
DISTI #
DMT47M2SFVW-13
|
Avnet Americas | Transistor MOSFET N-CH 40V 49.1A 8-Pin PowerDI 3333 T/R - Tape and Reel (Alt: DMT47M2SFVW-13) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days Container: Reel | 15000 Factory Stock |
|
$0.2415 | Buy Now | |
|
DISTI #
621-DMT47M2SFVW-13
|
Mouser Electronics | MOSFETs MOSFET BVDSS: 31V-40V PowerDI3333-8/SWP T&R 3K RoHS: Compliant | 0 |
|
$0.2110 / $0.2490 | Order Now | |
| Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks | 0 |
|
$0.2230 | Buy Now | ||
|
DISTI #
DMT47M2SFVW-13
|
Avnet Silica | (Alt: DMT47M2SFVW-13) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 26 Weeks, 0 Days | Silica - 0 |
|
Buy Now |
CAD Models for DMT47M2SFVW-13 by Diodes Incorporated
Part Data Attributes for DMT47M2SFVW-13 by Diodes Incorporated
|
|
|
|---|---|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Active
|
|
Ihs Manufacturer
|
DIODES INC
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
Factory Lead Time
|
24 Weeks
|
|
Date Of Intro
|
2019-06-10
|
|
Samacsys Manufacturer
|
Diodes Incorporated
|
|
Avalanche Energy Rating (Eas)
|
30.5 mJ
|
|
Case Connection
|
DRAIN
|
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Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
40 V
|
|
Drain Current-Max (ID)
|
49.1 A
|
|
Drain-source On Resistance-Max
|
0.0075 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
Feedback Cap-Max (Crss)
|
12.4 pF
|
|
JESD-30 Code
|
S-PDSO-F8
|
|
JESD-609 Code
|
e3
|
|
Moisture Sensitivity Level
|
1
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
8
|
|
Operating Mode
|
ENHANCEMENT MODE
|
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Operating Temperature-Max
|
150 °C
|
|
Operating Temperature-Min
|
-55 °C
|
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Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
SQUARE
|
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Package Style
|
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
27.1 W
|
|
Pulsed Drain Current-Max (IDM)
|
196 A
|
|
Reference Standard
|
MIL-STD-202
|
|
Surface Mount
|
YES
|
|
Terminal Finish
|
MATTE TIN
|
|
Terminal Form
|
FLAT
|
|
Terminal Position
|
DUAL
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|