Datasheets
DMT6005LCT by: Diodes Incorporated

Power Field-Effect Transistor, 100A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Details for DMT6005LCT by Diodes Incorporated

Overview of DMT6005LCT by Diodes Incorporated

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for DMT6005LCT

Part # Distributor Description Stock Price Buy
DISTI # DMT6005LCT-ND
DigiKey MOSFET N-CH 60V 100A TO220AB Min Qty: 50 Lead time: 12 Weeks Container: Tube Temporarily Out of Stock
  • 50 $1.3824
$1.3824 Buy Now
DISTI # DMT6005LCT
Avnet Americas MOSFET BVDSS: 41V~60V TO220-3 TUBE 50PCS - Rail/Tube (Alt: DMT6005LCT) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 12 Weeks, 0 Days Container: Tube 4800 Factory Stock
  • 50 $0.8460
  • 100 $0.8157
  • 200 $0.7912
  • 300 $0.7681
  • 400 $0.7392
  • 500 $0.7277
  • 5,000 $0.7161
$0.7161 / $0.8460 Buy Now
DISTI # 621-DMT6005LCT
Mouser Electronics MOSFET MOSFET BVDSS: 41V-60V 0
  • 1 $1.7200
  • 10 $1.2000
  • 100 $1.1500
  • 250 $1.1300
  • 500 $1.1200
  • 1,000 $1.1100
  • 2,500 $1.1000
$1.1000 / $1.7200 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 12 Weeks 0
  • 50 $0.7600
$0.7600 Buy Now
DISTI # DMT6005LCT
Avnet Silica (Alt: DMT6005LCT) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 14 Weeks, 0 Days Silica - 0
Buy Now

Part Details for DMT6005LCT

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DMT6005LCT Part Data Attributes

DMT6005LCT Diodes Incorporated
Buy Now Datasheet
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DMT6005LCT Diodes Incorporated Power Field-Effect Transistor, 100A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer DIODES INC
Package Description TO-220, 3 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Date Of Intro 2016-10-07
Samacsys Manufacturer Diodes Incorporated
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 43.5 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.006 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 130 A
Reference Standard AEC-Q101
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for DMT6005LCT

This table gives cross-reference parts and alternative options found for DMT6005LCT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DMT6005LCT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPP100N06S2L05AKSA1 Power Field-Effect Transistor, 100A I(D), 55V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG DMT6005LCT vs IPP100N06S2L05AKSA1
IPP100N06S205AKSA2 Power Field-Effect Transistor, 100A I(D), 55V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG DMT6005LCT vs IPP100N06S205AKSA2
STP80NF55-06-1 80A, 55V, 0.0065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TABLESS TO-220, I2PAK-3 STMicroelectronics DMT6005LCT vs STP80NF55-06-1
SQP120N06-06_GE3 Power Field-Effect Transistor, 119A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies DMT6005LCT vs SQP120N06-06_GE3
IPP80N06S2LH5AKSA1 Power Field-Effect Transistor, 80A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG DMT6005LCT vs IPP80N06S2LH5AKSA1
IPI070N06NG Power Field-Effect Transistor, 80A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG DMT6005LCT vs IPI070N06NG
SSF5508 Power Field-Effect Transistor, 110A I(D), 55V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Suzhou Good-Ark Electronics Co Ltd DMT6005LCT vs SSF5508
STP80NF55-07 80A, 55V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics DMT6005LCT vs STP80NF55-07
SQM120N06-06-GE3 TRANSISTOR 120 A, 60 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power Vishay Siliconix DMT6005LCT vs SQM120N06-06-GE3
SPP100N06S2L-05 Power Field-Effect Transistor, 100A I(D), 55V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN Infineon Technologies AG DMT6005LCT vs SPP100N06S2L-05

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