Part Details for DMT6005LCT by Diodes Incorporated
Overview of DMT6005LCT by Diodes Incorporated
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for DMT6005LCT
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
DMT6005LCT-ND
|
DigiKey | MOSFET N-CH 60V 100A TO220AB Min Qty: 50 Lead time: 12 Weeks Container: Tube | Temporarily Out of Stock |
|
$1.3824 | Buy Now |
DISTI #
DMT6005LCT
|
Avnet Americas | MOSFET BVDSS: 41V~60V TO220-3 TUBE 50PCS - Rail/Tube (Alt: DMT6005LCT) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 12 Weeks, 0 Days Container: Tube | 4800 Factory Stock |
|
$0.7161 / $0.8460 | Buy Now |
DISTI #
621-DMT6005LCT
|
Mouser Electronics | MOSFET MOSFET BVDSS: 41V-60V | 0 |
|
$1.1000 / $1.7200 | Order Now |
|
Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 12 Weeks | 0 |
|
$0.7600 | Buy Now |
DISTI #
DMT6005LCT
|
Avnet Silica | (Alt: DMT6005LCT) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 14 Weeks, 0 Days | Silica - 0 |
|
Buy Now |
Part Details for DMT6005LCT
DMT6005LCT CAD Models
DMT6005LCT Part Data Attributes
|
DMT6005LCT
Diodes Incorporated
Buy Now
Datasheet
|
Compare Parts:
DMT6005LCT
Diodes Incorporated
Power Field-Effect Transistor, 100A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Package Description | TO-220, 3 PIN | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Date Of Intro | 2016-10-07 | |
Samacsys Manufacturer | Diodes Incorporated | |
Additional Feature | HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 43.5 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.006 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 130 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for DMT6005LCT
This table gives cross-reference parts and alternative options found for DMT6005LCT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DMT6005LCT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPP100N06S2L05AKSA1 | Power Field-Effect Transistor, 100A I(D), 55V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | DMT6005LCT vs IPP100N06S2L05AKSA1 |
IPP100N06S205AKSA2 | Power Field-Effect Transistor, 100A I(D), 55V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | DMT6005LCT vs IPP100N06S205AKSA2 |
STP80NF55-06-1 | 80A, 55V, 0.0065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TABLESS TO-220, I2PAK-3 | STMicroelectronics | DMT6005LCT vs STP80NF55-06-1 |
SQP120N06-06_GE3 | Power Field-Effect Transistor, 119A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | DMT6005LCT vs SQP120N06-06_GE3 |
IPP80N06S2LH5AKSA1 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | DMT6005LCT vs IPP80N06S2LH5AKSA1 |
IPI070N06NG | Power Field-Effect Transistor, 80A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | DMT6005LCT vs IPI070N06NG |
SSF5508 | Power Field-Effect Transistor, 110A I(D), 55V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Suzhou Good-Ark Electronics Co Ltd | DMT6005LCT vs SSF5508 |
STP80NF55-07 | 80A, 55V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | DMT6005LCT vs STP80NF55-07 |
SQM120N06-06-GE3 | TRANSISTOR 120 A, 60 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power | Vishay Siliconix | DMT6005LCT vs SQM120N06-06-GE3 |
SPP100N06S2L-05 | Power Field-Effect Transistor, 100A I(D), 55V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | DMT6005LCT vs SPP100N06S2L-05 |