Part Details for DMT69M5LFVW-13 by Diodes Incorporated
Overview of DMT69M5LFVW-13 by Diodes Incorporated
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for DMT69M5LFVW-13
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
31-DMT69M5LFVW-13TR-ND
|
DigiKey | MOSFET BVDSS: 41V~60V POWERDI333 Min Qty: 3000 Lead time: 12 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
$0.2362 / $0.2749 | Buy Now |
|
DISTI #
DMT69M5LFVW-13
|
Avnet Americas | - Tape and Reel (Alt: DMT69M5LFVW-13) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.2609 | Buy Now |
|
DISTI #
621-DMT69M5LFVW-13
|
Mouser Electronics | MOSFETs MOSFET BVDSS: 41V-60V PowerDI3333-8/SWP T&R 3K RoHS: Compliant | 0 |
|
$0.2360 / $0.2690 | Order Now |
|
DISTI #
DMT69M5LFVW-13
|
Avnet Silica | (Alt: DMT69M5LFVW-13) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days | Silica - 0 |
|
Buy Now |
Part Details for DMT69M5LFVW-13
DMT69M5LFVW-13 CAD Models
DMT69M5LFVW-13 Part Data Attributes
|
|
DMT69M5LFVW-13
Diodes Incorporated
Buy Now
Datasheet
|
Compare Parts:
DMT69M5LFVW-13
Diodes Incorporated
Power Field-Effect Transistor, 14.8A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Avalanche Energy Rating (Eas) | 37.5 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 14.8 A | |
| Drain-source On Resistance-Max | 0.0083 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 52 pF | |
| JESD-30 Code | S-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 20.5 W | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Reference Standard | MIL-STD-202 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |