Part Details for DMT8008SCT by Diodes Incorporated
Overview of DMT8008SCT by Diodes Incorporated
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Environmental Monitoring
Industrial Automation
Agriculture Technology
Medical Imaging
Price & Stock for DMT8008SCT
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
76AJ4300
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Newark | Power Mosfet, 80V, 111A, To-220Ab-3 Rohs Compliant: Yes |Diodes Inc. DMT8008SCT RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$1.0300 / $1.7300 | Buy Now |
DISTI #
31-DMT8008SCT-ND
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DigiKey | MOSFET BVDSS: 61V~100V TO220AB T Min Qty: 50 Lead time: 20 Weeks Container: Tube | Temporarily Out of Stock |
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$0.9014 | Buy Now |
DISTI #
DMT8008SCT
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Avnet Americas | Transistor MOSFET N-Channel 80V 111A 3-Pin TO-220AB Tube - Rail/Tube (Alt: DMT8008SCT) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 20 Weeks, 0 Days Container: Tube | 7700 Factory Stock |
|
$0.6626 | Buy Now |
DISTI #
621-DMT8008SCT
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Mouser Electronics | MOSFETs MOSFET BVDSS: 61V-100V TO220AB TUBE 50PCS RoHS: Compliant | 0 |
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$0.8990 / $1.5400 | Order Now |
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Future Electronics | MOSFET MOSFET BVDSS: 61V 100V TO220AB TUBE 50PCS RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 20 Weeks Container: Tube | 0Tube |
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$0.8550 / $1.0200 | Buy Now |
DISTI #
DMT8008SCT
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Avnet Silica | Transistor MOSFET N-Channel 80V 111A 3-Pin TO-220AB Tube (Alt: DMT8008SCT) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 22 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for DMT8008SCT
DMT8008SCT CAD Models
DMT8008SCT Part Data Attributes
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DMT8008SCT
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMT8008SCT
Diodes Incorporated
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 20 Weeks | |
Samacsys Manufacturer | Diodes Incorporated | |
Avalanche Energy Rating (Eas) | 80 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 111 A | |
Drain-source On Resistance-Max | 0.0075 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 56 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 167 W | |
Pulsed Drain Current-Max (IDM) | 444 A | |
Reference Standard | MIL-STD-202 | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |