Datasheets
DMTH3002LK3-13 by:

Power Field-Effect Transistor,

Part Details for DMTH3002LK3-13 by Diodes Incorporated

Overview of DMTH3002LK3-13 by Diodes Incorporated

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Price & Stock for DMTH3002LK3-13

Part # Distributor Description Stock Price Buy
DISTI # 13AJ5644
Newark Mosfet, N-Ch, 30V, 150A, To-252 Rohs Compliant: Yes |Diodes Inc. DMTH3002LK3-13 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 2476
  • 1 $0.9320
$0.9320 Buy Now
DISTI # 31-DMTH3002LK3-13TR-ND
DigiKey MOSFET BVDSS: 25V~30V TO252 T&R Min Qty: 2500 Lead time: 20 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
  • 2,500 $0.5260
  • 5,000 $0.5009
  • 12,500 $0.4778
$0.4778 / $0.5260 Buy Now
DISTI # DMTH3002LK3-13
Avnet Americas Transistor Enhancement MOSFET N-CH 30V 150A 3-Pin TO-252 T/R - Tape and Reel (Alt: DMTH3002LK3-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks, 0 Days Container: Reel 2500 Factory Stock
  • 2,500 $0.5589
  • 5,000 $0.5389
  • 10,000 $0.5227
  • 15,000 $0.5074
  • 20,000 $0.4883
  • 25,000 $0.4807
  • 250,000 $0.4731
$0.4731 / $0.5589 Buy Now
DISTI # 621-DMTH3002LK3-13
Mouser Electronics MOSFET MOSFET BVDSS: 25V~30V TO252 T&R 2.5K RoHS: Compliant 0
  • 2,500 $0.5260
  • 5,000 $0.5000
  • 10,000 $0.4770
$0.4770 / $0.5260 Order Now
Future Electronics MOSFET BVDSS: 25V~30V TO252 T&R 2.5K RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.5150
  • 5,000 $0.5000
  • 7,500 $0.4900
$0.4900 / $0.5150 Buy Now
DISTI # DMTH3002LK3-13
Avnet Americas Transistor Enhancement MOSFET N-CH 30V 150A 3-Pin TO-252 T/R - Tape and Reel (Alt: DMTH3002LK3-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks, 0 Days Container: Reel 2500 Factory Stock
  • 2,500 $0.5589
  • 5,000 $0.5389
  • 10,000 $0.5227
  • 15,000 $0.5074
  • 20,000 $0.4883
  • 25,000 $0.4807
  • 250,000 $0.4731
$0.4731 / $0.5589 Buy Now
DISTI # DMTH3002LK3-13
Avnet Americas Transistor Enhancement MOSFET N-CH 30V 150A 3-Pin TO-252 T/R - Tape and Reel (Alt: DMTH3002LK3-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks, 0 Days Container: Reel 2500 Factory Stock
  • 2,500 $0.5589
  • 5,000 $0.5389
  • 10,000 $0.5227
  • 15,000 $0.5074
  • 20,000 $0.4883
  • 25,000 $0.4807
  • 250,000 $0.4731
$0.4731 / $0.5589 Buy Now
DISTI # DMTH3002LK3-13
Avnet Silica Transistor Enhancement MOSFET N-CH 30V 150A 3-Pin TO-252 T/R (Alt: DMTH3002LK3-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 3 Weeks, 1 Days Silica - 2500
Buy Now
DISTI # 3589212RL
element14 Asia-Pacific MOSFET, N-CH, 30V, 150A, TO-252 RoHS: Compliant Min Qty: 100 Container: Reel 2476
  • 100 $0.9812
  • 500 $0.8201
  • 1,000 $0.7395
$0.7395 / $0.9812 Buy Now
DISTI # 3589212
element14 Asia-Pacific MOSFET, N-CH, 30V, 150A, TO-252 RoHS: Compliant Min Qty: 1 Container: Cut Tape 2476
  • 1 $1.4498
  • 10 $1.2814
  • 100 $0.9812
  • 500 $0.8201
  • 1,000 $0.7395
$0.7395 / $1.4498 Buy Now
DISTI # 3589212RL
Farnell MOSFET, N-CH, 30V, 150A, TO-252 RoHS: Compliant Min Qty: 100 Lead time: 27 Weeks, 1 Days Container: Reel 2476
  • 100 $0.6374
  • 500 $0.6361
  • 1,000 $0.6349
  • 5,000 $0.6336
$0.6336 / $0.6374 Buy Now
DISTI # 3589212
Farnell MOSFET, N-CH, 30V, 150A, TO-252 RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Cut Tape 2476
  • 1 $0.8756
  • 10 $0.7659
  • 100 $0.6374
  • 500 $0.6361
  • 1,000 $0.6349
  • 5,000 $0.6336
$0.6336 / $0.8756 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 2500 2500
  • 2,500 $0.7901
$0.7901 Buy Now

Part Details for DMTH3002LK3-13

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DMTH3002LK3-13 Part Data Attributes

DMTH3002LK3-13 Diodes Incorporated
Buy Now Datasheet
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DMTH3002LK3-13 Diodes Incorporated Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer DIODES INC
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 20 Weeks
Avalanche Energy Rating (Eas) 312 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 150 A
Drain-source On Resistance-Max 0.0035 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 188 pF
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.1 W
Pulsed Drain Current-Max (IDM) 180 A
Reference Standard MIL-STD-202
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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