Part Details for DMTH6005LFG-7 by Diodes Incorporated
Overview of DMTH6005LFG-7 by Diodes Incorporated
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for DMTH6005LFG-7
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
31-DMTH6005LFG-7TR-ND
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DigiKey | MOSFET N-CH 60V 19.7A/100A PWRDI Min Qty: 2000 Lead time: 12 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$0.4534 / $0.4994 | Buy Now |
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DISTI #
DMTH6005LFG-7
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Avnet Americas | - Tape and Reel (Alt: DMTH6005LFG-7) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.4753 | Buy Now |
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DISTI #
621-DMTH6005LFG-7
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Mouser Electronics | MOSFETs MOSFET BVDSS: 41V-60V PowerDI3333-8 T&R 2K RoHS: Compliant | 0 |
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$0.4530 / $0.4900 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 12 Weeks | 0 |
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$0.4780 | Buy Now |
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DISTI #
DMTH6005LFG-7
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Avnet Silica | (Alt: DMTH6005LFG-7) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 14 Weeks, 0 Days | Silica - 0 |
|
Buy Now |
Part Details for DMTH6005LFG-7
DMTH6005LFG-7 CAD Models
DMTH6005LFG-7 Part Data Attributes
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DMTH6005LFG-7
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMTH6005LFG-7
Diodes Incorporated
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Avalanche Energy Rating (Eas) | 171 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.0041 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 69 pF | |
| JESD-30 Code | S-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Reference Standard | MIL-STD-202 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |