Part Details for DN3145N8-G by Microchip Technology Inc
Overview of DN3145N8-G by Microchip Technology Inc
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Automotive
Price & Stock for DN3145N8-G
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
67X5081
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Newark | Mosfet, N Channel, 450V, 0.1A, Sot-89-3, Channel Type:N Channel, Drain Source Voltage Vds:450V, Continuous Drain Current Id:100Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:0V, Gate Source Threshold Voltage Max:- Rohs Compliant: Yes |Microchip DN3145N8-G RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.7180 | Buy Now |
DISTI #
85X3187
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Newark | Mosfet, N Channel, 450V, 0.1A, To-243Aa-3, Channel Type:N Channel, Drain Source Voltage Vds:450V, Continuous Drain Current Id:100Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:0V, Gate Source Threshold Voltage Max:- Rohs Compliant: Yes |Microchip DN3145N8-G RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.7740 | Buy Now |
DISTI #
DN3145N8-G
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Avnet Americas | Trans MOSFET N-CH 450V 0.1A 3-Pin SOT-89 T/R - Tape and Reel (Alt: DN3145N8-G) RoHS: Not Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
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$0.6142 / $0.7452 | Buy Now |
DISTI #
DN3145N8-G
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Microchip Technology Inc | MOSFET, DEPLETION-MODE, 450V, 60 Ohm, SOT-89, Projected EOL: 2034-06-16 RoHS: Compliant Lead time: 8 Weeks, 0 Days Container: Reel |
0 Alternates Available COO: China, Philippines, Taiwan |
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Buy Now | |
DISTI #
70415907
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RS | 3 SOT-89 T/RMOSFET, DEPLETION-MODE, 450V, 60 Ohm | Microchip Technology Inc. DN3145N8-G RoHS: Not Compliant Min Qty: 2000 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Bulk | 0 |
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$0.6900 / $0.8100 | RFQ |
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NAC | MOSFET, DEPLETION-MODE, 450V, 60 Ohm - Package: 3 SOT-89 T/R RoHS: Compliant Min Qty: 1 Package Multiple: 2000 | 150000 |
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$0.7200 / $0.8900 | Buy Now |
DISTI #
DN3145N8-G
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Avnet Silica | Trans MOSFET N-CH 450V 0.1A 3-Pin SOT-89 T/R (Alt: DN3145N8-G) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 6 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
DISTI #
DN3145N8-G
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EBV Elektronik | Trans MOSFET N-CH 450V 0.1A 3-Pin SOT-89 T/R (Alt: DN3145N8-G) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 5 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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ES Components | MICROCHIP DN3145N8-G | 0 in Stock |
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RFQ |
Part Details for DN3145N8-G
DN3145N8-G CAD Models
DN3145N8-G Part Data Attributes
|
DN3145N8-G
Microchip Technology Inc
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Datasheet
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DN3145N8-G
Microchip Technology Inc
100mA, 450V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243AA
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
Package Description | SMALL OUTLINE, R-PSSO-F3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Microchip | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 450 V | |
Drain Current-Max (ID) | 0.1 A | |
Drain-source On Resistance-Max | 60 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 10 pF | |
JEDEC-95 Code | TO-243AA | |
JESD-30 Code | R-PSSO-F3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.3 W | |
Pulsed Drain Current-Max (IDM) | 0.3 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | FLAT | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 55 ns | |
Turn-on Time-Max (ton) | 25 ns |