Part Details for EPC2007C by Efficient Power Conversion
Overview of EPC2007C by Efficient Power Conversion
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Aerospace and Defense
Price & Stock for EPC2007C
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
917-1081-1-ND
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DigiKey | GANFET N-CH 100V 6A DIE OUTLINE Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
22058 In Stock |
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$0.9825 / $2.2600 | Buy Now |
Part Details for EPC2007C
EPC2007C CAD Models
EPC2007C Part Data Attributes:
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EPC2007C
Efficient Power Conversion
Buy Now
Datasheet
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EPC2007C
Efficient Power Conversion
Power Field-Effect Transistor, 6A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-5
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| Rohs Code | Yes | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | EFFICIENT POWER CONVERSION CORP | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, DIE-5 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Efficient Power Conversion | |
| Additional Feature | ULTRA LOW RESISTANCE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 0.03 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XXUC-X5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | UNCASED CHIP | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UNSPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | GALLIUM NITRIDE |