-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for EPC2019 by Efficient Power Conversion
Overview of EPC2019 by Efficient Power Conversion
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for EPC2019
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
917-1087-1-ND
|
DigiKey | GANFET N-CH 200V 8.5A DIE Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
94840 In Stock |
|
$1.8125 / $2.7300 | Buy Now |
Part Details for EPC2019
EPC2019 CAD Models
EPC2019 Part Data Attributes
|
|
EPC2019
Efficient Power Conversion
Buy Now
Datasheet
|
Compare Parts:
EPC2019
Efficient Power Conversion
Power Field-Effect Transistor, 8.5A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, DIE-7
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | EFFICIENT POWER CONVERSION CORP | |
| Package Description | UNCASED CHIP, R-XXUC-X7 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Efficient Power Conversion | |
| Additional Feature | ULTRA LOW RESISTANCE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 8.5 A | |
| Drain-source On Resistance-Max | 0.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XXUC-X7 | |
| Number of Elements | 1 | |
| Number of Terminals | 7 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | UNCASED CHIP | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 42 A | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UNSPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | GALLIUM NITRIDE |
Alternate Parts for EPC2019
This table gives cross-reference parts and alternative options found for EPC2019. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of EPC2019, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF6641TRPBF | Power Field-Effect Transistor, 4.6A I(D), 200V, 0.0599ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3 | Infineon Technologies AG | EPC2019 vs IRF6641TRPBF |
| IRF6641TRPBF | Power Field-Effect Transistor, 4.6A I(D), 200V, 0.0599ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3 | International Rectifier | EPC2019 vs IRF6641TRPBF |
| 2SK3445 | TRANSISTOR 20 A, 250 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-9F1B, SC-97, 4 PIN, FET General Purpose Power | Toshiba America Electronic Components | EPC2019 vs 2SK3445 |