Datasheets
F3L150R07W2E3_B11 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 150A I(C), 650V V(BR)CES, N-Channel, MODULE-34

Part Details for F3L150R07W2E3_B11 by Infineon Technologies AG

Overview of F3L150R07W2E3_B11 by Infineon Technologies AG

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Price & Stock for F3L150R07W2E3_B11

Part # Distributor Description Stock Price Buy
DISTI # 641-F3L150R07W2E3B11
Mouser Electronics IGBT Modules IGBT MODULES 650V 150A RoHS: Compliant 5
  • 1 $83.9000
  • 10 $73.9300
  • 30 $73.1200
  • 60 $70.0900
  • 105 $70.0800
$70.0800 / $83.9000 Buy Now
MacroQuest Electronics ISO 9001: 2015, ISO 14001:2015, ISO 45001:2018 200
  • 1 $77.1400
  • 10 $68.1400
  • 30 $59.1400
$59.1400 / $77.1400 Buy Now

Part Details for F3L150R07W2E3_B11

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F3L150R07W2E3_B11 Part Data Attributes

F3L150R07W2E3_B11 Infineon Technologies AG
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F3L150R07W2E3_B11 Infineon Technologies AG Insulated Gate Bipolar Transistor, 150A I(C), 650V V(BR)CES, N-Channel, MODULE-34
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description MODULE-34
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 150 A
Collector-Emitter Voltage-Max 650 V
Configuration COMPLEX
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X34
Number of Elements 4
Number of Terminals 34
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 335 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 480 ns
Turn-on Time-Nom (ton) 155 ns
VCEsat-Max 1.9 V

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