Part Details for F3L150R07W2E3_B11 by Infineon Technologies AG
Overview of F3L150R07W2E3_B11 by Infineon Technologies AG
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Price & Stock for F3L150R07W2E3_B11
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
641-F3L150R07W2E3B11
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Mouser Electronics | IGBT Modules IGBT MODULES 650V 150A RoHS: Compliant | 5 |
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$70.0800 / $83.9000 | Buy Now |
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MacroQuest Electronics | ISO 9001: 2015, ISO 14001:2015, ISO 45001:2018 | 200 |
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$59.1400 / $77.1400 | Buy Now |
Part Details for F3L150R07W2E3_B11
F3L150R07W2E3_B11 CAD Models
F3L150R07W2E3_B11 Part Data Attributes
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F3L150R07W2E3_B11
Infineon Technologies AG
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Datasheet
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F3L150R07W2E3_B11
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 150A I(C), 650V V(BR)CES, N-Channel, MODULE-34
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | MODULE-34 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 150 A | |
Collector-Emitter Voltage-Max | 650 V | |
Configuration | COMPLEX | |
Gate-Emitter Thr Voltage-Max | 6.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X34 | |
Number of Elements | 4 | |
Number of Terminals | 34 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 335 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 480 ns | |
Turn-on Time-Nom (ton) | 155 ns | |
VCEsat-Max | 1.9 V |