-
Part Symbol
-
Footprint
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for F3L150R07W2E3B11BOMA1 by Infineon Technologies AG
Overview of F3L150R07W2E3B11BOMA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for F3L150R07W2E3B11BOMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
12AC9646
|
Newark | Igbt, Module, N-Ch, 650V, 150A, Transistor Polarity:N Channel, Dc Collector Current:150A, Collector Emitter Saturation Voltage Vce(On):1.45V, Power Dissipation Pd:335W, Collector Emitter Voltage V(Br)Ceo:650V, Transistor Case Rohs Compliant: Yes |Infineon F3L150R07W2E3B11BOMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
|
$63.8600 / $73.6000 | Buy Now |
|
DISTI #
F3L150R07W2E3B11BOMA1-ND
|
DigiKey | IGBT MOD 650V 150A 335W Min Qty: 1 Lead time: 26 Weeks Container: Tray |
6 In Stock |
|
$70.2120 / $85.0200 | Buy Now |
|
DISTI #
F3L150R07W2E3B11BOMA1
|
Avnet Americas | Transistor IGBT Module N-CH 650V 150A 20V Screw Mount Tray - Trays (Alt: F3L150R07W2E3B11BOMA1) RoHS: Compliant Min Qty: 15 Package Multiple: 15 Lead time: 26 Weeks, 0 Days Container: Tray | 0 |
|
$84.1805 | Buy Now |
|
|
Future Electronics | F3L150 Series 650 V 150 A 335W Standard Three Phase Inverter Trench Field Module RoHS: Compliant pbFree: Yes Min Qty: 15 Package Multiple: 15 Container: Tray | 0Tray |
|
$72.6000 / $73.9400 | Buy Now |
|
|
Rochester Electronics | F3L150R07 - IGBT Module RoHS: Compliant Status: Active Min Qty: 1 | 13 |
|
$67.3200 / $79.2000 | Buy Now |
|
DISTI #
F3L150R07W2E3B11BOMA1
|
Avnet Americas | Transistor IGBT Module N-CH 650V 150A 20V Screw Mount Tray - Trays (Alt: F3L150R07W2E3B11BOMA1) RoHS: Compliant Min Qty: 15 Package Multiple: 15 Lead time: 26 Weeks, 0 Days Container: Tray | 0 |
|
$84.1805 | Buy Now |
|
DISTI #
F3L150R07W2E3B11BOMA1
|
Avnet Americas | Transistor IGBT Module N-CH 650V 150A 20V Screw Mount Tray - Trays (Alt: F3L150R07W2E3B11BOMA1) RoHS: Compliant Min Qty: 15 Package Multiple: 15 Lead time: 26 Weeks, 0 Days Container: Tray | 0 |
|
$84.1805 | Buy Now |
|
DISTI #
SP000638568
|
EBV Elektronik | Transistor IGBT Module N-CH 650V 150A 20V Screw Mount Tray (Alt: SP000638568) RoHS: Compliant Min Qty: 15 Package Multiple: 15 Lead time: 3 Weeks, 6 Days | EBV - 0 |
|
Buy Now | |
|
DISTI #
2709947
|
element14 Asia-Pacific | IGBT, MODULE, N-CH, 650V, 150A RoHS: Compliant Min Qty: 1 Container: Each | 15 |
|
$86.5111 | Buy Now |
|
DISTI #
2709947
|
Farnell | IGBT, MODULE, N-CH, 650V, 150A RoHS: Compliant Min Qty: 1 Lead time: 51 Weeks, 1 Days Container: Each | 15 |
|
$56.0336 | Buy Now |
Part Details for F3L150R07W2E3B11BOMA1
F3L150R07W2E3B11BOMA1 CAD Models
F3L150R07W2E3B11BOMA1 Part Data Attributes
|
|
F3L150R07W2E3B11BOMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
F3L150R07W2E3B11BOMA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 26 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 150 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | COMPLEX | |
| Gate-Emitter Thr Voltage-Max | 6.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X34 | |
| Number of Elements | 4 | |
| Number of Terminals | 34 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 335 W | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 480 ns | |
| Turn-on Time-Nom (ton) | 155 ns | |
| VCEsat-Max | 1.9 V |