Datasheets
F3L200R07PE4BOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel, MODULE-20

Part Details for F3L200R07PE4BOSA1 by Infineon Technologies AG

Overview of F3L200R07PE4BOSA1 by Infineon Technologies AG

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Applications Industrial Automation Electronic Manufacturing

Price & Stock for F3L200R07PE4BOSA1

Part # Distributor Description Stock Price Buy
DISTI # 34AC1548
Newark Igbt, Module, N-Ch, 650V, 200A, Transistor Polarity:N Channel, Dc Collector Current:200A, Collector Emitter Saturation Voltage Vce(On):1.55V, Power Dissipation Pd:680W, Collector Emitter Voltage V(Br)Ceo:650V, Transistor Case Rohs Compliant: Yes |Infineon F3L200R07PE4BOSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $175.6300
  • 5 $170.8800
  • 10 $166.1300
  • 25 $163.7600
  • 50 $161.3900
  • 100 $151.8900
$151.8900 / $175.6300 Buy Now
DISTI # F3L200R07PE4BOSA1-ND
DigiKey IGBT MOD 650V 200A 680W Min Qty: 1 Lead time: 20 Weeks Container: Tray 3
In Stock
  • 1 $218.0400
  • 12 $204.2217
  • 30 $196.5443
$196.5443 / $218.0400 Buy Now
DISTI # F3L200R07PE4BOSA1
Avnet Americas EconoPACK 4 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4-diode and NTC - Trays (Alt: F3L200R07PE4BOSA1) RoHS: Compliant Min Qty: 6 Package Multiple: 6 Lead time: 20 Weeks, 0 Days Container: Tray 0
  • 6 $235.6465
$235.6465 Buy Now
Future Electronics 650 V 200 A EconoPACK™ 4 3-level phase leg IGBT module RoHS: Compliant pbFree: Yes Min Qty: 6 Package Multiple: 6 Lead time: 20 Weeks Container: Tray 0
Tray
  • 6 $204.5300
  • 12 $202.3600
  • 18 $200.2200
$200.2200 / $204.5300 Buy Now
Rochester Electronics F3L200R07 - IGBT Module RoHS: Compliant Status: Active Min Qty: 1 3232
  • 1 $221.7100
  • 25 $217.2800
  • 100 $208.4100
  • 500 $199.5400
  • 1,000 $188.4500
$188.4500 / $221.7100 Buy Now
DISTI # SP000711882
EBV Elektronik EconoPACK 4 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4-diode and NTC (Alt: SP000711882) RoHS: Compliant Min Qty: 6 Package Multiple: 6 Lead time: 21 Weeks, 0 Days EBV - 0
Buy Now

Part Details for F3L200R07PE4BOSA1

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F3L200R07PE4BOSA1 Part Data Attributes

F3L200R07PE4BOSA1 Infineon Technologies AG
Buy Now Datasheet
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F3L200R07PE4BOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel, MODULE-20
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description FLANGE MOUNT, R-XUFM-X20
Pin Count 20
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector-Emitter Voltage-Max 650 V
Configuration COMPLEX
JESD-30 Code R-XUFM-X20
Number of Elements 4
Number of Terminals 20
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 600 ns
Turn-on Time-Nom (ton) 190 ns

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