Datasheets
F4150R17ME4B11BPSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 230A I(C), 1700V V(BR)CES, N-Channel, MODULE-13

Part Details for F4150R17ME4B11BPSA1 by Infineon Technologies AG

Overview of F4150R17ME4B11BPSA1 by Infineon Technologies AG

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Price & Stock for F4150R17ME4B11BPSA1

Part # Distributor Description Stock Price Buy
DISTI # F4150R17ME4B11BPSA1-ND
DigiKey IGBT MODULE 1700V 230A Lead time: 98 Weeks Container: Tray Limited Supply - Call
Buy Now
DISTI # F4150R17ME4B11BPSA1
Avnet Americas MEDIUM POWER ECONO - Trays (Alt: F4150R17ME4B11BPSA1) RoHS: Compliant Min Qty: 6 Package Multiple: 6 Container: Tray 0
RFQ
Rochester Electronics F4150R17ME4_B11 - EconoDUAL module with Trench/Fieldstop IGBT4 and Emitter Controlled 3 diode RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 12
  • 1 $155.2200
  • 25 $152.1100
  • 100 $145.9000
  • 500 $139.6900
  • 1,000 $131.9300
$131.9300 / $155.2200 Buy Now
DISTI # F4150R17ME4B11BPSA1
Avnet Americas MEDIUM POWER ECONO - Trays (Alt: F4150R17ME4B11BPSA1) RoHS: Compliant Min Qty: 6 Package Multiple: 6 Container: Tray 0
RFQ
DISTI # F4150R17ME4B11BPSA1
Avnet Americas MEDIUM POWER ECONO - Trays (Alt: F4150R17ME4B11BPSA1) RoHS: Compliant Min Qty: 6 Package Multiple: 6 Container: Tray 0
RFQ
DISTI # SP001347656
EBV Elektronik MEDIUM POWER ECONO (Alt: SP001347656) RoHS: Compliant Min Qty: 6 Package Multiple: 6 Lead time: 7 Weeks, 4 Days EBV - 0
Buy Now

Part Details for F4150R17ME4B11BPSA1

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F4150R17ME4B11BPSA1 Part Data Attributes

F4150R17ME4B11BPSA1 Infineon Technologies AG
Buy Now Datasheet
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F4150R17ME4B11BPSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 230A I(C), 1700V V(BR)CES, N-Channel, MODULE-13
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-XUFM-X13
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 230 A
Collector-Emitter Voltage-Max 1700 V
Configuration 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 Code R-XUFM-X13
Number of Elements 4
Number of Terminals 13
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 780 ns
Turn-on Time-Nom (ton) 270 ns

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