Part Details for FBG20N18BSH by Micross Components
Overview of FBG20N18BSH by Micross Components
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for FBG20N18BSH
FBG20N18BSH CAD Models
FBG20N18BSH Part Data Attributes
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FBG20N18BSH
Micross Components
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Datasheet
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FBG20N18BSH
Micross Components
Power Field-Effect Transistor, 18A I(D), 200V, 0.028ohm, 1-Element, N-Channel, Gallium Nitride, High Electron Mobility FET,
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROSS COMPONENTS | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY | |
| Case Connection | DRAIN SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.028 Ω | |
| FET Technology | HIGH ELECTRON MOBILITY | |
| Feedback Cap-Max (Crss) | 13 pF | |
| JESD-30 Code | R-XBCC-N4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | DEPLETION MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Reference Standard | MIL-PRF-19500; MIL-STD-750; RH - 1000K Rad(Si) | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | GALLIUM NITRIDE |