Part Details for FCD5N60TM by Fairchild Semiconductor Corporation
Results Overview of FCD5N60TM by Fairchild Semiconductor Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FCD5N60TM Information
FCD5N60TM by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FCD5N60TM
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 2185 |
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RFQ | ||
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ComSIT USA | Electronic Component RoHS: Compliant |
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RFQ | |
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Win Source Electronics | Trans MOSFET N-CH 600V 4.6A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 600V 4.6A DPAK | 29957 |
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$1.2683 / $1.6381 | Buy Now |
Part Details for FCD5N60TM
FCD5N60TM CAD Models
FCD5N60TM Part Data Attributes
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FCD5N60TM
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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FCD5N60TM
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 4.6A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DPAK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | DPAK | |
Package Description | ROHS COMPLIANT, DPAK-3 | |
Pin Count | 3 | |
Manufacturer Package Code | TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 159 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 4.6 A | |
Drain-source On Resistance-Max | 0.95 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 54 W | |
Pulsed Drain Current-Max (IDM) | 13.8 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FCD5N60TM
This table gives cross-reference parts and alternative options found for FCD5N60TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FCD5N60TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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FCD5N60TM_WS | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2 | FCD5N60TM vs FCD5N60TM_WS |
FCD5N60TF | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 4.6A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DPAK-3 | FCD5N60TM vs FCD5N60TF |
IPD65R950C6ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 650V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC, DPAK-3/2 | FCD5N60TM vs IPD65R950C6ATMA1 |