Datasheets
FCD5N60TM_WS by:

Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2

Part Details for FCD5N60TM_WS by Fairchild Semiconductor Corporation

Results Overview of FCD5N60TM_WS by Fairchild Semiconductor Corporation

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FCD5N60TM_WS Information

FCD5N60TM_WS by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FCD5N60TM_WS

Part # Distributor Description Stock Price Buy
Bristol Electronics   2495
RFQ

Part Details for FCD5N60TM_WS

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FCD5N60TM_WS Part Data Attributes

FCD5N60TM_WS Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FCD5N60TM_WS Fairchild Semiconductor Corporation Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code DPAK
Package Description ROHS COMPLIANT, PLASTIC, DPAK-3/2
Pin Count 3
Manufacturer Package Code TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 230 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 7 A
Drain-source On Resistance-Max 0.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 54 W
Pulsed Drain Current-Max (IDM) 21 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FCD5N60TM_WS

This table gives cross-reference parts and alternative options found for FCD5N60TM_WS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FCD5N60TM_WS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FCD5N60TM Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 4.6A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DPAK-3 FCD5N60TM_WS vs FCD5N60TM
IPD65R950C6 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 650V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC, DPAK-3/2 FCD5N60TM_WS vs IPD65R950C6

FCD5N60TM_WS Related Parts

FCD5N60TM_WS Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for FCD5N60TM_WS is -55°C to 150°C.

  • To ensure safe operating area (SOA) for FCD5N60TM_WS, follow the guidelines provided in the datasheet, including voltage and current limits, and consider factors such as thermal management, PCB design, and component selection.

  • The recommended gate drive voltage for FCD5N60TM_WS is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • To handle ESD protection for FCD5N60TM_WS, follow proper handling and storage procedures, use ESD-protective packaging and materials, and consider adding external ESD protection devices if necessary.

  • The maximum allowable power dissipation for FCD5N60TM_WS is dependent on the thermal management and PCB design, but the datasheet provides a maximum power dissipation of 150W at a case temperature of 25°C.

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