Datasheets
FCH072N60F by:

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 600 V, 52 A, 72 mΩ, TO-247, TO-247-3, 450-TUBE

Part Details for FCH072N60F by onsemi

Results Overview of FCH072N60F by onsemi

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FCH072N60F Information

FCH072N60F by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FCH072N60F

Part # Distributor Description Stock Price Buy
DISTI # 46AC0754
Newark Mosfet, N-Ch, 600V, 52A, To-247-3, Transistor Polarity:N Channel, Continuous Drain Current Id:52A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.065Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:5V, Power Rohs Compliant: Yes |Onsemi FCH072N60F RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 339
  • 1 $10.6600
  • 10 $9.5700
  • 25 $8.4700
  • 50 $7.3800
  • 100 $7.0400
  • 250 $6.7100
$6.7100 / $10.6600 Buy Now
DISTI # FCH072N60F
Avnet Americas Trans MOSFET N-CH 600V 52A 3-Pin TO-247 Tube - Rail/Tube (Alt: FCH072N60F) RoHS: Compliant Min Qty: 30 Package Multiple: 1 Lead time: 14 Weeks, 0 Days Container: Tube 0
  • 450 $4.5080
  • 900 $4.4537
  • 1,800 $4.4007
  • 2,700 $4.3799
  • 3,600 $4.3489
$4.3489 / $4.5080 Buy Now
DISTI # FCH072N60F
TME Transistor: N-MOSFET, unipolar, 600V, 33A, Idm: 156A, 481W, TO247 Min Qty: 1 0
  • 1 $8.0000
  • 10 $5.8200
  • 30 $5.5400
  • 450 $4.8800
  • 900 $4.7200
  • 1,020 $4.6900
  • 2,010 $4.5300
$4.5300 / $8.0000 RFQ
DISTI # FCH072N60F
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 450 0
  • 450 $4.6200
$4.6200 Buy Now
DISTI # FCH072N60F
Avnet Asia Trans MOSFET N-CH 600V 52A 3-Pin TO-247 Tube (Alt: FCH072N60F) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 14 Weeks, 0 Days 2250
  • 450 $10.8999
  • 900 $6.8787
$6.8787 / $10.8999 Buy Now
DISTI # FCH072N60F
Avnet Silica Trans MOSFET N-CH 600V 52A 3-Pin TO-247 Tube (Alt: FCH072N60F) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 15 Weeks, 0 Days Silica - 0
Buy Now
DISTI # C1S226600861603
Chip One Stop Trans MOSFET N-CH 600V 52A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Container: Tube 30
  • 1 $4.9800
  • 5 $4.9600
  • 10 $4.9500
  • 30 $4.8500
$4.8500 / $4.9800 Buy Now
DISTI # FCH072N60F
EBV Elektronik Trans MOSFET N-CH 600V 52A 3-Pin TO-247 Tube (Alt: FCH072N60F) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now
LCSC 600V 52A 481W 72m10V26A 3V 1 N-channel TO-247-3 MOSFETs ROHS 112
  • 1 $3.7882
  • 10 $3.2787
  • 30 $2.6866
  • 90 $2.3791
  • 450 $2.2383
  • 900 $2.1741
$2.1741 / $3.7882 Buy Now
MacroQuest Electronics ISO 9001: 2015, ISO 14001:2015, ISO 45001:2018 4500
  • 1 $5.7100
  • 10 $5.0000
  • 100 $4.2900
$4.2900 / $5.7100 Buy Now

Part Details for FCH072N60F

FCH072N60F CAD Models

FCH072N60F Part Data Attributes

FCH072N60F onsemi
Buy Now Datasheet
Compare Parts:
FCH072N60F onsemi Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 600 V, 52 A, 72 mΩ, TO-247, TO-247-3, 450-TUBE
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code TO-247-3
Package Description ROHS COMPLIANT, PLASTIC PACKAGE-3
Manufacturer Package Code 340CK
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 14 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 1128 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 52 A
Drain-source On Resistance-Max 0.072 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 481 W
Pulsed Drain Current-Max (IDM) 156 A
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

FCH072N60F Related Parts

FCH072N60F Frequently Asked Questions (FAQ)

  • The maximum junction temperature of the FCH072N60F is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.

  • To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or a heat spreader. Use a thermal interface material (TIM) to fill any gaps between the device and the heat sink, and ensure the heat sink is properly mounted and secured.

  • The recommended gate drive voltage for the FCH072N60F is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's essential to consult the datasheet and application notes for more information.

  • Yes, the FCH072N60F can be used in a parallel configuration to increase the current handling capability. However, it's crucial to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing.

  • The maximum allowable voltage transient for the FCH072N60F is specified in the datasheet as 80V. However, it's recommended to limit the voltage transient to 60V or less to ensure the device operates within its safe operating area.

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