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Part Details for FCH072N60F by onsemi
Overview of FCH072N60F by onsemi
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for FCH072N60F
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
46AC0754
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Newark | Mosfet, N-Ch, 600V, 52A, To-247-3, Transistor Polarity:N Channel, Continuous Drain Current Id:52A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.065Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:5V, Power Rohs Compliant: Yes |Onsemi FCH072N60F RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 383 |
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$6.7600 / $10.1700 | Buy Now |
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DISTI #
FCH072N60F
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Avnet Americas | Trans MOSFET N-CH 600V 52A 3-Pin TO-247 Tube - Rail/Tube (Alt: FCH072N60F) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
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$4.3489 / $4.5080 | Buy Now |
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DISTI #
FCH072N60F
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TME | Transistor: N-MOSFET, unipolar, 600V, 33A, Idm: 156A, 481W, TO247 Min Qty: 1 | 0 |
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$4.6700 / $8.2300 | RFQ |
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DISTI #
FCH072N60F
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 450 | 0 |
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$4.6200 | Buy Now |
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DISTI #
FCH072N60F
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Avnet Asia | Trans MOSFET N-CH 600V 52A 3-Pin TO-247 Tube (Alt: FCH072N60F) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 16 Weeks, 0 Days | 2250 |
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$6.8787 / $10.8999 | Buy Now |
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DISTI #
FCH072N60F
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Avnet Silica | Trans MOSFET N-CH 600V 52A 3-Pin TO-247 Tube (Alt: FCH072N60F) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
C1S226600861603
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Chip1Stop | Trans MOSFET N-CH 600V 52A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Container: Tube | 30 |
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$4.8800 / $5.1800 | Buy Now |
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DISTI #
FCH072N60F
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EBV Elektronik | Trans MOSFET N-CH 600V 52A 3-Pin TO-247 Tube (Alt: FCH072N60F) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 18 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 600V 52A 481W 72m10V26A 3V250uA 1 N-channel TO-247-3 MOSFETs ROHS | 88 |
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$2.4050 / $4.0652 | Buy Now |
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MacroQuest Electronics | ISO 9001: 2015, ISO 14001:2015, ISO 45001:2018 | 4500 |
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$4.2900 / $5.7100 | Buy Now |
Part Details for FCH072N60F
FCH072N60F CAD Models
FCH072N60F Part Data Attributes
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FCH072N60F
onsemi
Buy Now
Datasheet
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Compare Parts:
FCH072N60F
onsemi
Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 600 V, 52 A, 72 mΩ, TO-247, TO-247-3, 450-TUBE
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-247-3 | |
| Package Description | ROHS COMPLIANT, PLASTIC PACKAGE-3 | |
| Manufacturer Package Code | 340CK | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 1128 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 52 A | |
| Drain-source On Resistance-Max | 0.072 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 481 W | |
| Pulsed Drain Current-Max (IDM) | 156 A | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |