Datasheets
FCP104N60F by:

Power Field-Effect Transistor, 37A I(D), 600V, 0.104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3

Part Details for FCP104N60F by Fairchild Semiconductor Corporation

Overview of FCP104N60F by Fairchild Semiconductor Corporation

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Price & Stock for FCP104N60F

Part # Distributor Description Stock Price Buy
Rochester Electronics Power Field-Effect Transistor, 37A, 600V, 0.104ohm, N-Channel, MOSFET, TO-220AB RoHS: Compliant Status: Active Min Qty: 1 92
  • 1 $3.2800
  • 25 $3.2100
  • 100 $3.0800
  • 500 $2.9500
  • 1,000 $2.7900
$2.7900 / $3.2800 Buy Now

Part Details for FCP104N60F

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FCP104N60F Part Data Attributes

FCP104N60F Fairchild Semiconductor Corporation
Buy Now Datasheet
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FCP104N60F Fairchild Semiconductor Corporation Power Field-Effect Transistor, 37A I(D), 600V, 0.104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-220
Package Description ROHS COMPLIANT, PLASTIC PACKAGE-3
Pin Count 3
Manufacturer Package Code TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB (F102)
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 809 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 37 A
Drain-source On Resistance-Max 0.104 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 357 W
Pulsed Drain Current-Max (IDM) 114 A
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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