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Transistors / Power Field-Effect Transistors / FCPF067N65S3
Datasheets
FCPF067N65S3 by:

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 44 A, 67 mΩ, TO-220F, TO-220-3 FullPak, 1000-TUBE

Part Details for FCPF067N65S3 by onsemi

Results Overview of FCPF067N65S3 by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Renewable Energy

FCPF067N65S3 Information

FCPF067N65S3 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FCPF067N65S3

Part # Distributor Description Stock Price Buy
DISTI # 79AH2448
Newark Sf3 650V 67Mohm E To220F Rohs Compliant: Yes |Onsemi FCPF067N65S3 RoHS: Compliant Min Qty: 50 Package Multiple: 1 Date Code: 0 Container: Bulk 987
  • 50 $5.5800
  • 100 $5.3700
  • 250 $5.2400
  • 500 $4.9400
$4.9400 / $5.5800 Buy Now
DISTI # 84Y5813
Newark Mosfet, N-Ch, 650V, 44A, To-220F-3, Transistor Polarity:N Channel, Continuous Drain Current Id:44A, Drain Source Voltage Vds:650V, On Resistance Rds(On):0.059Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4.5V, Power Rohs Compliant: Yes |Onsemi FCPF067N65S3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $7.6300
  • 10 $6.6500
  • 25 $5.6800
  • 50 $4.7100
  • 100 $4.4200
  • 250 $4.3400
  • 500 $4.2700
$4.2700 / $7.6300 Buy Now
DISTI # FCPF067N65S3
Avnet Americas Transistor MOSFET N-CH 650V 44A 3-Pin TO-220F Tube - Rail/Tube (Alt: FCPF067N65S3) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 18 Weeks, 0 Days Container: Tube 987
  • 50 $4.1062
  • 60 $3.3117
  • 110 $3.2723
  • 250 $3.2567
  • 500 $3.2338
$3.2338 / $4.1062 Buy Now
DISTI # FCPF067N65S3
Avnet Americas Transistor MOSFET N-CH 650V 44A 3-Pin TO-220F Tube - Rail/Tube (Alt: FCPF067N65S3) RoHS: Compliant Min Qty: 77 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube 25000 Partner Stock
  • 77 $7.9512
  • 80 $7.8554
  • 160 $7.7619
  • 390 $7.7251
  • 770 $7.6706
$7.6706 / $7.9512 Buy Now
DISTI # FCPF067N65S3
Avnet Americas Transistor MOSFET N-CH 650V 44A 3-Pin TO-220F Tube - Rail/Tube (Alt: FCPF067N65S3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Tube 0
  • 1,000 $3.3521
  • 2,000 $3.3117
  • 4,000 $3.2723
  • 6,000 $3.2567
  • 8,000 $3.2338
$3.2338 / $3.3521 Buy Now
DISTI # 73928908
RS Transistor, MOSFET, power, N-channel, easy drive, 650V, 44A, 67mOhm | ON Semiconductor FCPF067N65S3 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Lead time: 2 Weeks, 0 Days Container: Bulk 0
  • 5 $4.6700
$4.6700 RFQ
DISTI # FCPF067N65S3
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1000 0
  • 1,000 $3.4400
$3.4400 Buy Now
DISTI # FCPF067N65S3
Avnet Asia Transistor MOSFET N-CH 650V 44A 3-Pin TO-220F Tube (Alt: FCPF067N65S3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days 0
  • 1,000 $3.6167
  • 2,000 $3.5697
  • 3,000 $3.5240
  • 5,000 $3.4794
  • 10,000 $3.3935
  • 25,000 $3.3117
  • 50,000 $3.2338
$3.2338 / $3.6167 Buy Now
DISTI # FCPF067N65S3
Avnet Silica Transistor MOSFET N-CH 650V 44A 3-Pin TO-220F Tube (Alt: FCPF067N65S3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 19 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FCPF067N65S3
EBV Elektronik Transistor MOSFET N-CH 650V 44A 3-Pin TO-220F Tube (Alt: FCPF067N65S3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 20 Weeks, 0 Days EBV - 0
Buy Now
Flip Electronics Stock, ship today 25000
RFQ
LCSC 650V 44A 67m10V22A 46W 4.5V0.99mA 1 N-channel TO-220F-3 MOSFETs ROHS 1
  • 1 $5.4575
  • 10 $4.8088
  • 50 $4.4131
  • 100 $3.6671
$3.6671 / $5.4575 Buy Now
Win Source Electronics MOSFET N-CH 650V 44A TO220F / Telecom / Sever Power Supplies 10380
  • 11 $4.6419
  • 24 $4.3425
  • 36 $4.1927
  • 52 $3.8933
  • 67 $3.7435
  • 84 $3.5938
$3.5938 / $4.6419 Buy Now

Part Details for FCPF067N65S3

FCPF067N65S3 CAD Models

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FCPF067N65S3 Part Data Attributes

Parametric Data
FCPF067N65S3 onsemi
Buy Now Datasheet
Compare Parts:
FCPF067N65S3 onsemi Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 44 A, 67 mΩ, TO-220F, TO-220-3 FullPak, 1000-TUBE
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code TO-220-3 FullPak
Package Description TO-220F, 3 PIN
Manufacturer Package Code 221AT
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 214 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 44 A
Drain-source On Resistance-Max 0.067 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 46 W
Pulsed Drain Current-Max (IDM) 110 A
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FCPF067N65S3

This table gives cross-reference parts and alternative options found for FCPF067N65S3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FCPF067N65S3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
APT40N60JCU2 Microsemi Corporation Check for Price Power Field-Effect Transistor, 40A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOTOP-4 FCPF067N65S3 vs APT40N60JCU2
TK39A60W,S4VX Toshiba America Electronic Components Check for Price Power MOSFET - Nch 500V<VDSS≤700V FCPF067N65S3 vs TK39A60W,S4VX
IXKF40N60SCD1 Littelfuse Inc Check for Price Power Field-Effect Transistor, 38A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I4PAC-3 FCPF067N65S3 vs IXKF40N60SCD1
IXKR40N60 Littelfuse Inc Check for Price Power Field-Effect Transistor, 40A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN FCPF067N65S3 vs IXKR40N60
TK39A60W Toshiba America Electronic Components Check for Price TRANSISTOR POWER, FET, FET General Purpose Power FCPF067N65S3 vs TK39A60W

FCPF067N65S3 Related Parts

FCPF067N65S3 Frequently Asked Questions (FAQ)

  • The maximum junction temperature of the FCPF067N65S3 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.

  • To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or a heat spreader. Use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and ensure the heat sink is designed for the device's power dissipation.

  • The recommended gate drive voltage for the FCPF067N65S3 is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. Consult the datasheet and application notes for more information.

  • Yes, the FCPF067N65S3 is suitable for high-reliability applications. onsemi provides a range of reliability data, including FIT rates and MTBF calculations, to support the use of this device in critical applications.

  • To protect the FCPF067N65S3 from ESD, follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Ensure that the device is properly grounded during handling and assembly.

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