Datasheets
FCPF125N65S3 by: onsemi

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 24 A, 125 mΩ, TO-220F, TO-220-3 FullPak, 1000-TUBE

Part Details for FCPF125N65S3 by onsemi

Results Overview of FCPF125N65S3 by onsemi

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

FCPF125N65S3 Information

FCPF125N65S3 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FCPF125N65S3

Part # Distributor Description Stock Price Buy
DISTI # 22AC8206
Newark Mosfet, N-Ch, 650V, 24A, To-220F, Transistor Polarity:N Channel, Continuous Drain Current Id:24A, Drain Source Voltage Vds:650V, On Resistance Rds(On):0.105Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4.5V, Power Rohs Compliant: Yes |Onsemi FCPF125N65S3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $6.0900
  • 10 $5.0700
  • 25 $4.4900
  • 50 $3.9100
  • 100 $3.6900
  • 250 $3.5700
  • 500 $3.4400
$3.4400 / $6.0900 Buy Now
DISTI # FCPF125N65S3
Avnet Americas Transistor MOSFET N-CH 650V 24A 3-Pin TO-220F T/R - Rail/Tube (Alt: FCPF125N65S3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Tube 0
  • 1,000 $2.1911
  • 2,000 $2.1647
  • 4,000 $2.1389
  • 6,000 $2.1288
  • 8,000 $2.1138
$2.1138 / $2.1911 Buy Now
DISTI # FCPF125N65S3
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1000 0
  • 1,000 $2.2500
$2.2500 Buy Now
DISTI # FCPF125N65S3
Avnet Silica Transistor MOSFET NCH 650V 24A 3Pin TO220F TR (Alt: FCPF125N65S3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 13 Weeks, 0 Days Silica - 750
Buy Now
DISTI # FCPF125N65S3
EBV Elektronik Transistor MOSFET NCH 650V 24A 3Pin TO220F TR (Alt: FCPF125N65S3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 14 Weeks, 0 Days EBV - 0
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 50 600
  • 50 $3.7700
  • 600 $3.4900
$3.4900 / $3.7700 Buy Now

Part Details for FCPF125N65S3

FCPF125N65S3 CAD Models

FCPF125N65S3 Part Data Attributes

FCPF125N65S3 onsemi
Buy Now Datasheet
Compare Parts:
FCPF125N65S3 onsemi Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 24 A, 125 mΩ, TO-220F, TO-220-3 FullPak, 1000-TUBE
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code TO-220-3 FullPak
Package Description TO-220F, 3 PIN
Manufacturer Package Code 221AT
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Date Of Intro 2017-05-12
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 115 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 24 A
Drain-source On Resistance-Max 0.125 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 38 W
Pulsed Drain Current-Max (IDM) 60 A
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

FCPF125N65S3 Related Parts

FCPF125N65S3 Frequently Asked Questions (FAQ)

  • The maximum junction temperature for the FCPF125N65S3 is 150°C. However, it's recommended to operate the device at a temperature below 125°C for optimal performance and reliability.

  • To ensure proper biasing, make sure to provide a stable voltage supply to the gate driver, and ensure the gate-source voltage (Vgs) is within the recommended range of 2.5V to 10V. Additionally, ensure the drain-source voltage (Vds) is within the recommended range of 0V to 650V.

  • For optimal thermal management, it's recommended to use a PCB with a thick copper layer (at least 2 oz) and a thermal relief pattern under the device. Additionally, ensure good airflow around the device and consider using a heat sink if the device will be operating at high temperatures or high power levels.

  • To protect the FCPF125N65S3 from ESD, handle the device by the body or use an ESD wrist strap or mat. Ensure the PCB is designed with ESD protection in mind, and consider adding ESD protection devices such as TVS diodes or ESD arrays.

  • The recommended gate resistor value for the FCPF125N65S3 is typically in the range of 10Ω to 100Ω. However, the optimal value depends on the specific application and switching frequency. It's recommended to consult the application note or contact onsemi support for more information.

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