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Transistors IGBTs FD1000R33HE3KBPSA1

FD1000R33HE3KBPSA1
Infineon Technologies AG
Description: Insulated Gate Bipolar Transistor, 1000A I(C), 3300V V(BR)CES, N-Channel, MODULE-9

Overview of FD1000R33HE3KBPSA1 by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 4 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Space Technology Computing and Data Storage Aerospace and Defense Energy and Power Systems Electronic Manufacturing Renewable Energy Automotive

Price & Stock for FD1000R33HE3KBPSA1 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 448-FD1000R33HE3KBPSA1-ND
DigiKey IGBT MODULE 3300V 1000A Min Qty: 1 Lead time: 26 Weeks Container: Tray 1
In Stock
  • 1 $1,630.2000
$1,630.2000 Buy Now
DISTI # FD1000R33HE3KBPSA1
Avnet Americas Trans IGBT Module N-CH 3.3KV 1000A 9-pin IHVB190-3 - Trays (Alt: FD1000R33HE3KBPSA1) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 52 Weeks, 0 Days Container: Tray 0
RFQ
DISTI # FD1000R33HE3KBPSA1
TME Module: IGBT, diode/transistor, buck-boost chopper, Urmax: 3.3kV Min Qty: 1 0
  • 1 $2,908.1100
  • 3 $2,572.5600
$2,572.5600 / $2,908.1100 RFQ
DISTI # SP001181570
EBV Elektronik Trans IGBT Module N-CH 3.3KV 1000A 9-pin IHVB190-3 (Alt: SP001181570) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 27 Weeks, 0 Days EBV - 0
Buy Now

CAD Models for FD1000R33HE3KBPSA1 by Infineon Technologies AG
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Part Data Attributes for FD1000R33HE3KBPSA1 by Infineon Technologies AG
Parametric Data

FD1000R33HE3KBPSA1
Infineon Technologies AG
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
FLANGE MOUNT, R-XUFM-X9
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Factory Lead Time
52 Weeks
Case Connection
ISOLATED
Collector Current-Max (IC)
1000 A
Collector-Emitter Voltage-Max
3300 V
Configuration
COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 Code
R-XUFM-X9
Number of Elements
2
Number of Terminals
9
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Surface Mount
NO
Terminal Form
UNSPECIFIED
Terminal Position
UPPER
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
POWER CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
3550 ns
Turn-on Time-Nom (ton)
1150 ns
Want to compare parts?
  1. FD1000R33HE3KBPSA1
    Infineon Technologies AG
    Insulated Gate Bipolar Transistor, 1000A I(C), 3300V V(BR)CES, N-Channel, MODULE-9
    VS

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