Datasheets
FDA16N50-F109 by:

Power MOSFET, N-Channel, UniFETTM, 500 V, 16.5 A, 380 mΩ, TO-3P, TO-3PN 3L, 450-TUBE

Part Details for FDA16N50-F109 by onsemi

Overview of FDA16N50-F109 by onsemi

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Price & Stock for FDA16N50-F109

Part # Distributor Description Stock Price Buy
DISTI # 48AC0864
Newark N-Channel UnifetTm Mosfet 500V, 16.5A, 380 M/Tube |Onsemi FDA16N50-F109 Min Qty: 450 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 250 $1.5500
  • 500 $1.5100
$1.5100 / $1.5500 Buy Now
DISTI # FDA16N50-F109OS-ND
DigiKey MOSFET N-CH 500V 16.5A TO3PN Min Qty: 1 Lead time: 26 Weeks Container: Tube 259
In Stock
  • 1 $3.0300
  • 30 $2.3973
  • 120 $2.0549
  • 510 $1.8266
  • 1,020 $1.5640
  • 2,010 $1.4727
  • 5,010 $1.4129
$1.4129 / $3.0300 Buy Now
DISTI # FDA16N50-F109
Avnet Americas Trans MOSFET N-CH 500V 16.5A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FDA16N50-F109) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 26 Weeks, 0 Days Container: Tube 0
  • 450 $1.6954
  • 900 $1.6502
  • 1,800 $1.6050
  • 2,700 $1.5598
  • 3,600 $1.5146
$1.5146 / $1.6954 Buy Now
DISTI # 512-FDA16N50_F109
Mouser Electronics MOSFET 500V 16.5A NCH 0
  • 1 $3.0200
  • 10 $2.5400
  • 25 $2.3900
  • 100 $2.0500
  • 250 $1.9400
  • 450 $1.8200
  • 900 $1.5600
  • 2,700 $1.4700
  • 5,400 $1.4100
$1.4100 / $3.0200 Order Now
DISTI # V36:1790_06359581
Arrow Electronics Trans MOSFET N-CH 500V 16.5A 3-Pin(3+Tab) TO-3P Tube Min Qty: 1 Package Multiple: 1 Lead time: 26 Weeks Date Code: 2408 Americas - 420
  • 1 $2.9720
  • 10 $2.5100
  • 25 $2.3650
  • 30 $2.2980
  • 100 $2.0340
  • 120 $1.9360
  • 250 $1.8100
  • 450 $1.7390
  • 510 $1.6310
  • 900 $1.5130
  • 1,020 $1.3960
  • 2,010 $1.3540
$1.3540 / $2.9720 Buy Now
DISTI # 79015941
Verical Trans MOSFET N-CH 500V 16.5A 3-Pin(3+Tab) TO-3P Tube Min Qty: 5 Package Multiple: 1 Date Code: 2408 Americas - 420
  • 5 $2.9720
  • 10 $2.5100
  • 25 $2.3650
  • 30 $2.2980
  • 100 $2.0340
  • 120 $1.9360
  • 250 $1.8100
  • 450 $1.7390
  • 510 $1.6310
  • 900 $1.5130
  • 1,020 $1.3960
  • 2,010 $1.3540
$1.3540 / $2.9720 Buy Now
DISTI # FDA16N50-F109
Avnet Americas Trans MOSFET N-CH 500V 16.5A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FDA16N50-F109) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 26 Weeks, 0 Days Container: Tube 0
  • 450 $1.6954
  • 900 $1.6502
  • 1,800 $1.6050
  • 2,700 $1.5598
  • 3,600 $1.5146
$1.5146 / $1.6954 Buy Now
DISTI # FDA16N50-F109
Avnet Americas Trans MOSFET N-CH 500V 16.5A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FDA16N50-F109) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 26 Weeks, 0 Days Container: Tube 0
  • 450 $1.6954
  • 900 $1.6502
  • 1,800 $1.6050
  • 2,700 $1.5598
  • 3,600 $1.5146
$1.5146 / $1.6954 Buy Now
DISTI # FDA16N50-F109
Avnet Silica Trans MOSFET N-CH 500V 16.5A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FDA16N50-F109) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 3 Weeks, 6 Days Silica - 900
Buy Now
DISTI # C1S541901590417
Chip1Stop MOSFET RoHS: Compliant Container: Tube 480
  • 1 $3.9800
  • 10 $2.5000
  • 30 $2.2900
  • 300 $1.8000
$1.8000 / $3.9800 Buy Now
DISTI # FDA16N50-F109
EBV Elektronik Trans MOSFET N-CH 500V 16.5A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FDA16N50-F109) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 4 Weeks, 0 Days EBV - 0
Buy Now
DISTI # 1324783
element14 Asia-Pacific MOSFET, N, TO-3P RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $2.9323
  • 10 $2.4338
  • 100 $2.0306
  • 500 $1.7301
  • 1,000 $1.5834
$1.5834 / $2.9323 Buy Now
DISTI # 1324783
Farnell MOSFET, N, TO-3P RoHS: Compliant Min Qty: 1 Lead time: 36 Weeks, 6 Days Container: Each 0
  • 1 $3.9450
  • 25 $2.7215
  • 100 $2.3720
  • 250 $2.3221
  • 1,000 $2.2596
$2.2596 / $3.9450 Buy Now

Part Details for FDA16N50-F109

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FDA16N50-F109 Part Data Attributes

FDA16N50-F109 onsemi
Buy Now Datasheet
Compare Parts:
FDA16N50-F109 onsemi Power MOSFET, N-Channel, UniFETTM, 500 V, 16.5 A, 380 mΩ, TO-3P, TO-3PN 3L, 450-TUBE
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code TO-3PN 3L
Package Description TO-3PN, 3 PIN
Manufacturer Package Code 340BZ
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 780 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 16.5 A
Drain-source On Resistance-Max 0.38 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 205 W
Pulsed Drain Current-Max (IDM) 66 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDA16N50-F109

This table gives cross-reference parts and alternative options found for FDA16N50-F109. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDA16N50-F109, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
PHD83N03LT 72A, 25V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3 NXP Semiconductors FDA16N50-F109 vs PHD83N03LT
IXFH12N100F Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 IXYS Corporation FDA16N50-F109 vs IXFH12N100F
SSS7N60B Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN Fairchild Semiconductor Corporation FDA16N50-F109 vs SSS7N60B
BUK465-60A 41A, 60V, 0.038ohm, N-CHANNEL, Si, POWER, MOSFET NXP Semiconductors FDA16N50-F109 vs BUK465-60A
FDP6035L Power Field-Effect Transistor, 58A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation FDA16N50-F109 vs FDP6035L
FQA17N40 Power Field-Effect Transistor, 17.2A I(D), 400V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PN, 3 PIN Fairchild Semiconductor Corporation FDA16N50-F109 vs FQA17N40
SPB80N06S2-07 Power Field-Effect Transistor, 80A I(D), 55V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN Infineon Technologies AG FDA16N50-F109 vs SPB80N06S2-07
IXFH30N40Q Power Field-Effect Transistor, 30A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Littelfuse Inc FDA16N50-F109 vs IXFH30N40Q
STW80N06-10 80A, 60V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN STMicroelectronics FDA16N50-F109 vs STW80N06-10
IXFK35N50 Power Field-Effect Transistor, 35A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264, TO-264, 3 PIN IXYS Corporation FDA16N50-F109 vs IXFK35N50

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